© 2010 Fairchild Semiconductor Corporation

www.fairchildsemi.com

MPSA63 / MMBTA63 / PZTA63 Rev. A1

1

August 2010

MPSA63 / MMBTA63 / PZTA63

PNP Darlington Transistor

Features

• This device is designed for applications requiring extremely high current gain at currents to 800 mA.

• Sourced from Process 61.

* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1) These ratings are based on a maximum junction temperature of 150 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle

operations.

* Device mounted on FR-4 PCB 1.6”

× 1.6” × 0.06”.

** Device mounted on FR-4 PCB 36mm

Symbol

Parameter

Value

Units

Collector-Emitter Voltage

-30

V

Collector-Base Voltage

-30

V

Emitter-Base Voltage

-10

V

Collector Current - Continuous

-1.2

A

Operating and Storage Junction Temperature Range

- 55 to +150

°C

Symbol

Parameter

Max.

Units

MPSA63

*MMBTA63

**PZTA63

Total Device Dissipation

Derate above 25

°C

625

5.0

350

2.8

1,000

8.0

mW

mW/

°C

Thermal Resistance, Junction to Case

83.3

°C/W

Thermal Resistance, Junction to Ambient

200

357

125

°C/W

MPSA63

MMBTA63

PZTA63

EB C

TO-92

SOT-23

SOT-223

Mark:2U

C

B

E

E

B

C

C