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2N3108 Folha de dados(PDF) 2 Page - Comset Semiconductor

Nome de Peças 2N3108
Descrição Electrónicos  GENERAL PURPOSE AMPLIFIERS AND SWITCHES
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Fabricante Electrônico  COMSET [Comset Semiconductor]
Página de início  http://comset.halfin.com
Logo COMSET - Comset Semiconductor

2N3108 Folha de dados(HTML) 2 Page - Comset Semiconductor

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N
NP
PN
N 2N3108 – 2N3110
08/08/2012
COMSET SEMICONDUCTORS
2/3
ELECTRICAL CHARACTERISTICS
Tj=25°C unless otherwise specified
Symbol
Ratings
Test Condition(s)
Min
Typ
Max
Unit
ICBO
Collector Cutoff Current
VCB = 60 V, IE = 0
Tamb = 150°C
-
-
10
µA
ICES
Collector Cutoff Current
VCE = 60 V, VBE = 0
-
-
10
nA
IEBO
Emitter Cutoff Current
VBE = 5.0 V, IC = 0
-
-
10
nA
VCBO
Collector-Base
Breakdown Voltage
IC = 100 µA, IE = 0
2N3108
100
-
-
V
2N3110
80
-
-
VCEO
Collector-emitter
Breakdown Voltage
IC = 30 mA, IB = 0
2N3108
60
-
-
V
2N3110
40
-
-
VEBO
Emitter-Base Breakdown
Voltage
IE = 100 µA, IC = 0
7
-
-
V
VCE(SAT)
Collector-Emitter
saturation Voltage
IC = 150 mA, IB = 15 mA
-
-
0.25
V
IC = 1 A, IB = 100 mA
-
-
1
VBE(SAT)
Base-Emitter saturation
Voltage
IC = 150 mA, IB = 15 mA
-
-
1.1
V
IC = 1 A, IB = 100 mA
-
-
2
hFE
DC Current Gain
IC = 150 mA, VCE = 1 V
40
-
120
-
IC = 0.1 mA, VCE = 10 V
20
-
IC = 500 mA, VCE = 10 V
25
-
-
IC = 150 mA, VCE = 10 V
Tamb = -55°C
15
-
-
fT
Transition frequency
IC = 50 mA, VCE = 10 V
f = 20MHz
60
-
-
MHz
CEBO
Emitter-Base
Capacitance
IC = 0, VEB = 0.5 V
f = 1MHz
-
-
80
pF
CCBO
Collector-Base
Capacitance
IE = ie =0, VCB = 10 V
f = 1MHz
2N3108
-
-
20
pF
2N3110
-
-
25
SWITCHING TIMES
Symbol
Ratings
Value
Unit
ton
Turn-on time
IC = 150 mA; IB1 = 7.5 mA,
VCC = 20 V
200
ns
toff
Turn-off time
IC = 150 mA
IB1 = -IB2 = 7.5 mA
VCC = 20 V
600


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