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2SC3646 Folha de dados(PDF) 1 Page - Sanyo Semicon Device

Nome de Peças 2SC3646
Descrição Electrónicos  High-Voltage Switching Applications
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Fabricante Electrônico  SANYO [Sanyo Semicon Device]
Página de início  https://www.sanyo-av.com/us/
Logo SANYO - Sanyo Semicon Device

2SC3646 Folha de dados(HTML) 1 Page - Sanyo Semicon Device

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2SA1416 / 2SC3646
No.2005-1/7
Features
Adoption of FBET, MBIT processes
High breakdown voltage and large current capacity
Fast switching speed
Ultrasmall size making it easy to provide high-density, small-sized hybrid IC’s
Specifications ( ) : 2SA1416
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
Collector-to-Base Voltage
VCBO
(--)120
V
Collector-to-Emitter Voltage
VCEO
(--)100
V
Emitter-to-Base Voltage
VEBO
(--)6
V
Collector Current
IC
(--)1
A
Collector Current (Pulse)
ICP
(--)2
A
Collector Dissipation
PC
500
mW
When mounted on ceramic substrate (250mm2×0.8mm)
1.3
W
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Package Dimensions
unit : mm (typ)
7007B-004
Ordering number : EN2005C
82212 TKIM/31010EA TKIM/O3103TN (KT)/71598HA (KT)/3277KI/N255MW, TS
SANYO Semiconductors
DATA SHEET
http://www.sanyosemi.com/en/network/
Product & Package Information
• Package
: PCP
• JEITA, JEDEC
: SC-62, SOT-89, TO-243
• Minimum Packing Quantity : 1,000 pcs./reel
Packing Type: TD
Marking
Electrical Connection
TD
1 : Base
2 : Collector
3 : Emitter
SANYO : PCP
1.5
0.5
0.4
3.0
4.5
1.6
0.4
12
3
1.5
0.75
Top View
Bottom View
2SA1416S-TD-E
2SA1416T-TD-E
2SC3646S-TD-E
2SC3646T-TD-E
2SC3646
2SA1416
RANK
RANK
2
3
1
2SC3646
2
3
1
2SA1416
2SA1416/2SC3646
PNP / NPN Epitaxial Planar Silicon Transistor
High-Voltage Switching
Applications


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