TC1301V datasheet(1/2 Pages) TRANSCOM

Nome de Peças	TC1301V

Descrição Electrónicos	Low Noise and Medium Power GaAs FETs

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Fabricante Electrônico	TRANSCOM [Transcom, Inc.]

Página de início	http://www.transcominc.com.tw

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TC1301V

REV5_20070502

TRANSCOM, INC., 90 Dasoong 7

th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C.

Web-Site: www.transcominc.com.tw

Phone: 886-6-5050086

Fax: 886-6-5051602

1 / 2

Low Noise and Medium Power GaAs FETs

FEATURES

!

Via hole for source grouding

PHOTO ENLARGEMENT

!

Low Noise Figure: NF = 0.8dB Typical at 12 GHz

!

High Associated Gain: Ga = 12 dB Typical at 12 GHz

!

High Dynamic Range: 1 dB Compression Power P-1 = 24.5

dBm at 12 GHz

!

Breakdown Voltage: BVDGO

≥ 9 V

!

Lg = 0.25

µm, Wg = 600 µm

!

All-Gold Metallization for High Reliability

!

Tight Vp ranges control

!

High RF input power handling capability

!

100 % DC Tested

DESCRIPTION

The TC1301V is the same as TC1301 expect via holes in the source pads for reducing the grounding inductance.

The device is processed with via-holes for high gain applications. It can be used in circuits up to 30 GHz and

suitable for low noise and medium power amplifier application including a wide range of commercial and military

application. All devices are 100% DC tested to assure consistent quality. All bond pads are gold plated for either

thermo-compression or thermo-sonic wire bonding.

ELECTRICAL SPECIFICATIONS (TA=25

°°°°C)

Symbol

Conditions

MIN

TYP

MAX

UNIT

NF

Noise Figure at VDS = 4 V, IDS = 50 Ma, f

= 12GHz

0.8

1.0

dB

Ga

Associated Gain at VDS = 4 V, IDS = 50 mA, f

= 12GHz

10

12

dB

P1dB

Output Power at 1dB Gain Compression Point, f

= 12GHz,VDS = 6 V, IDS = 80 mA

23.5

24.5

dBm

GL

Linear Power Gain, f

= 12GHz,VDS = 6 V, IDS = 80 mA

9

10

dB

IDSS

Saturated Drain-Source Current at VDS = 2 V, VGS = 0 V

180

mA

gm

Transconductance at VDS = 2 V, VGS = 0 V

200

mS

VP

Pinch-off Voltage at VDS = 2 V, ID = 1.2 mA

-1.0*

Volts

BVDGO

Drain-Gate Breakdown Voltage at IDGO =0.3mA

9

12

Volts

Rth

Thermal Resistance

48

°C/W

Note: * For the tight control of the pinch-off voltage . TC1301V’s are divided into 3 groups:

(1) TC1301VP0710 : Vp = -0.7V to -1.0V (2) TC1301VP0811 : Vp = -0.8V to -1.1V

(3) TC1301VP0912 : Vp = -0.9V to -1.2V

In addition, the customers may specify their requirements.

Nº de peça semelhante - TC1301V

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
List of Unclassifed Man...	TC1301	206Kb / 6P	Low Noise and Medium Power GaAs FETs
Transcom, Inc.	TC1301	251Kb / 6P	Low Noise and Medium Power GaAs FETs
Microchip Technology	TC1301A	1Mb / 28P	Dual LDO with Microcontroller RESET Function 2005
	TC1301A	778Kb / 28P	Dual LDO with Microcontroller RESET Function 2008
	TC1301A	665Kb / 28P	Dual LDO with Microcontroller RESET Function 01/02/08

More results

Descrição semelhante - TC1301V

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
Transcom, Inc.	TC1201	251Kb / 6P	Low Noise and Medium Power GaAs FETs
	TC1201V	122Kb / 2P	Low Noise and Medium Power GaAs FETs
	TC1101V	90Kb / 2P	Low Noise and Medium Power GaAs FETs
	TC1301	251Kb / 6P	Low Noise and Medium Power GaAs FETs
List of Unclassifed Man...	TC1301	206Kb / 6P	Low Noise and Medium Power GaAs FETs
Transcom, Inc.	TC1304	261Kb / 6P	Low Noise and Medium Power GaAs FETs
List of Unclassifed Man...	TC1101	154Kb / 6P	Low Noise and Medium Power GaAs FETs
Transcom, Inc.	TC1101	250Kb / 5P	Low Noise and Medium Power GaAs FETs
	TC1304V	71Kb / 2P	Low Noise and Medium Power GaAs FETs
	TC2384	192Kb / 4P	Low Noise and Medium Power Packaged GaAs FETs

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Nº de peça semelhante - TC1301V

Descrição semelhante - TC1301V

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