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CSD16340Q3 Folha de dados(PDF) 4 Page - Texas Instruments

Nome de Peças CSD16340Q3
Descrição Electrónicos  The NexFET power MOSFET has been designed to minimize losses in power conversion and optimized for 5V gate drive applications.
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Fabricante Electrônico  TI1 [Texas Instruments]
Página de início  http://www.ti.com
Logo TI1 - Texas Instruments

CSD16340Q3 Folha de dados(HTML) 4 Page - Texas Instruments

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VDS − Drain to Source Voltage − V
0
15
25
35
40
45
50
0.0
0.2
0.4
0.5
0.6
G001
0.1
0.3
30
20
5
10
VGS = 3.5V
VGS = 8V
VGS = 4.5V
VGS = 3V
VGS = 2.5V
VGS − Gate to Source Voltage − V
5
15
25
35
40
45
1.7
1.1
1.3
1.5
2.1
G002
50
0.7
0.9
1.9
VDS = 5V
0
10
20
30
TC = −55 C
°
TC = 125 C
°
TC = 25 C
°
Qg − GateCharge − nC
0
1
4
7
0
2
4
6
8
10
12
G003
3
2
5
6
8
ID =20A
V
=12.5V
DS
VDS − DraintoSourceVoltage − V
0.0
0.5
1.0
1.5
2.0
2.5
0
5
10
15
20
25
G004
CRSS
GD
=C
CISS
GD
GS
=C
+C
COSS
GD
GS
=C
+C
f=1MHz
V
=0V
GS
TC − Case Temperature − C
°
0.0
0.2
0.4
0.6
0.8
1.0
1.2
−75
−25
25
75
125
175
G005
ID =250 A
m
VGS − Gate to Source Voltage − V
0
2
4
6
8
10
12
14
16
0
3
4
7
8
9
10
G006
5
6
1
2
ID = 20A
TC = 125 C
°
TC = 25 C
°
CSD16340Q3
SLPS247D
– DECEMBER 2009 – REVISED NOVEMBER 2011
www.ti.com
TYPICAL MOSFET CHARACTERISTICS (continued)
(TA = 25°C unless otherwise stated)
Figure 3. Saturation Characteristics
Figure 4. Transfer Characteristics
Figure 5. Gate Charge
Figure 6. Capacitance
Figure 7. Threshold Voltage vs. Temperature
Figure 8. On Resistance vs. Gate Voltage
4
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Product Folder Link(s): CSD16340Q3


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