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AD660AR Folha de dados(PDF) 3 Page - Analog Devices

Nome de Peças AD660AR
Descrição Electrónicos  Monolithic 16-Bit Serial/Byte DACPORT
Download  12 Pages
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Fabricante Electrônico  AD [Analog Devices]
Página de início  http://www.analog.com
Logo AD - Analog Devices

AD660AR Folha de dados(HTML) 3 Page - Analog Devices

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AD660
REV. A
–3–
(With the exception of Total Harmonic Distortion + Noise and Signal-to-Noise
Ratio, these characteristics are included for design guidance only and are not subject to test. THD+N and SNR are 100% tested.
TMIN
≤ T
A
≤ T
MAX, VCC = +15 V, VEE = –15 V, VLL = +5 V except where noted.)
Parameter
Limit
Units
Test Conditions/Comments
Output Settling Time
13
µs max
20 V Step, TA = +25
°C
(Time to
±0.0008% FS
8
µs typ
20 V Step, TA = +25°C
with 2 k
Ω, 1000 pF Load)
10
µs typ
20 V Step, TMIN
≤ T
A
≤ T
MAX
6
µs typ
10 V Step, TA = +25
°C
8
µs typ
10 V Step, TMIN ≤ TA ≤ TMAX
2.5
µs typ
1 LSB Step, TMIN
≤ T
A
≤ T
MAX
Total Harmonic Distortion + Noise
A, B, S Grade
0.009
% max
0 dB, 990.5 Hz; Sample Rate = 96 kHz; TA = +25
°C
A, B, S Grade
0.056
% max
–20 dB, 990.5 Hz; Sample Rate = 96 kHz; TA = +25
°C
A, B, S Grade
5.6
% max
–60 dB, 990.5 Hz; Sample Rate = 96 kHz; TA = +25°C
Signal-to-Noise Ratio
83
dB min
TA = +25°C
Digital-to-Analog Glitch Impulse
15
nV-s typ
DAC Alternately Loaded with 8000H and 7FFFH
Digital Feedthrough
2
nV-s typ
DAC Alternately Loaded with 0000H and FFFFH; CS High
Output Noise Voltage
120
nV/
√Hz typ
Measured at VOUT; 20 V Span; Excludes Reference
Density (1 kHz – 1 MHz)
Reference Noise
125
nV/
√Hz typ
Measured at REF OUT
Specifications subject to change without notice.
AC PERFORMANCE CHARACTERISTICS
WARNING!
ESD SENSITIVE DEVICE
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection.
Although the AD660 features proprietary ESD protection circuitry, permanent damage may
occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD
precautions are recommended to avoid performance degradation or loss of functionality.
ABSOLUTE MAXIMUM RATINGS*
VCC to AGND . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to +17.0 V
VEE to AGND . . . . . . . . . . . . . . . . . . . . . . . +0.3 V to –17.0 V
VLL to DGND . . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to +7 V
AGND to DGND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
±1 V
Digital Inputs (Pins 5 through 23) to DGND . . . . . . –1.0 V to
+7.0 V
REF IN to AGND . . . . . . . . . . . . . . . . . . . . . . . . . . . .
±10.5 V
Span/Bipolar Offset to AGND . . . . . . . . . . . . . . . . . . .
±10.5 V
Ref Out, VOUT . . . . . . . Indefinite Short to AGND, DGND,
VCC, VEE, and VLL
Power Dissipation (Any Package)
To +60
°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1000 mW
Derates above +60
°C . . . . . . . . . . . . . . . . . . . . 8.7 mW/°C
Storage Temperature . . . . . . . . . . . . . . . . . . . –65
°C to +150°C
Lead Temperature Range
(Soldering 10 sec) . . . . . . . . . . . . . . . . . . . . . . . . . . . +300
°C
*Stresses above those listed under “Absolute Maximum Ratings” may cause
permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions above those indicated in
the operational section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect device reliability.
PIN CONFIGURATION
1
2
3
7
24
23
22
18
8
9
10
17
16
15
11
12
14
13
4
5
21
20
6
19
TOP VIEW
(Not to Scale)
AD660
DB7, 15
S
OUT
SPAN,
BIPOLAR OFFSET
V
OUT
AGND
REF OUT
REF IN
LDAC
DGND
–V
EE
+V
CC
+V
LL
CS
HBE
SER
CLR
DB6, 14
DB5, 13
DB4, 12
DB3, 11
DB2, 10
DB0, 8, SIN
DB1, 9, MSB/LSB
LBE, UNI/BIP CLEAR


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