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AD8042AR-REEL Folha de dados(PDF) 5 Page - Analog Devices

Nome de Peças AD8042AR-REEL
Descrição Electrónicos  Dual 160 MHz Rail-to-Rail Amplifier
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Fabricante Electrônico  AD [Analog Devices]
Página de início  http://www.analog.com
Logo AD - Analog Devices

AD8042AR-REEL Folha de dados(HTML) 5 Page - Analog Devices

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REV. C
AD8042
–5–
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4,000 V readily
accumulate on the human body and test equipment and can discharge without detection. Although the
AD8042 features proprietary ESD protection circuitry, permanent damage may occur on devices
subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are recommended
to avoid performance degradation or loss of functionality.
ABSOLUTE MAXIMUM RATINGS
1
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12.6 V
Internal Power Dissipation
2
Plastic DIP Package (N) . . . . . . . . . . . . . . . . . . . . . . 1.3 W
Small Outline Package (R) . . . . . . . . . . . . . . . . . . . . . 0.9 W
Input Voltage (Common Mode) . . . . . . . . . . . . .
±VS ± 0.5 V
Differential Input Voltage . . . . . . . . . . . . . . . . . . . . . .
±3.4 V
Output Short-Circuit Duration
Observe Power Derating Curves
Storage Temperature Range (N, R) . . . . . . . –65
∞C to +125∞C
Lead Temperature Range (Soldering 10 sec) . . . . . . . . . 300
∞C
NOTES
1 Stresses above those listed under Absolute Maximum Ratings may cause perma-
nent damage to the device. This is a stress rating only; functional operation of the
device at these or any other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
2 Specification is for the device in free air:
8-Lead Plastic DIP Package:
qJA = 90∞C/W
8-Lead SOIC Package:
qJA = 155∞C/W
MAXIMUM POWER DISSIPATION
The maximum power that can be safely dissipated by the AD8042
is limited by the associated rise in junction temperature. The
maximum safe junction temperature for plastic encapsulated
devices is determined by the glass transition temperature of the
plastic—approximately 150
∞C. Exceeding this limit temporarily
may cause a shift in parametric performance due to a change in
the stresses exerted on the die by the package.
Exceeding a junction temperature of 175
∞C for an extended
period can result in device failure.
While the AD8042 is internally short-circuit protected, this may
not be sufficient to guarantee that the maximum junction
temperature (150
∞C) is not exceeded under all conditions. To
ensure proper operation, it is necessary to observe the maximum
power derating curves.
AMBIENT TEMPERATURE ( C)
2.0
1.5
0
–50
90
–40 –30 –20 –10
0
10
20
30
50 60
70 80
40
1.0
0.5
8-LEAD PLASTIC-DIP PACKAGE
8-LEAD SOIC PACKAGE
TJ = 150 C
Figure 3. Maximum Power Dissipation vs. Temperature
ORDERING GUIDE
Temperature
Package
Package
Model
Range
Description
Option
AD8042AN
–40
∞C to +85∞C
8-Lead DIP
N-8
AD8042AR
–40
∞C to +85∞C
8-Lead SOIC
SO-8
AD8042AR-REEL
–40
∞C to +85∞C
8-Lead SOIC 13" REEL
SO-8
AD8042AR-REEL7
–40
∞C to +85∞C
8-Lead SOIC 7" REEL
SO-8
AD8042ARZ
*
–40
∞C to +85∞C
8-Lead SOIC
SO-8
AD8042ARZ-REEL
*
–40
∞C to +85∞C
8-Lead SOIC 13" REEL
SO-8
AD8042ARZ-REEL7
*
–40
∞C to +85∞C
8-Lead SOIC 7" REEL
SO-8
AD8042ACHIPS
DIE
*Z = Pb-free part


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