STD44N4LF6 datasheet(3/15 Pages) STMICROELECTRONICS

Nome de Peças	STD44N4LF6

Descrição Electrónicos	N-channel 40 V, 8.9 m廓, 44 A DPAK STripFET??VI DeepGATE??Power MOSFET

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Fabricante Electrônico	STMICROELECTRONICS [STMicroelectronics]

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STD44N4LF6

Electrical ratings

Doc ID 17171 Rev 4

3/15

1

Electrical ratings

Table 2.

Absolute maximum ratings

Symbol

Parameter

Value

Unit

VDS

Drain-source voltage (VGS = 0)

40

V

VGS

Gate-source voltage

± 20

V

ID

Drain current (continuous) at TC = 25 °C

44

A

ID

Drain current (continuous) at TC = 100 °C

31

A

IDM

(1)

1.

Pulse is rated according SOA

Drain current (pulsed)

176

A

PTOT

Total dissipation at TC = 25 °C

50

W

Derating factor

0.33

W/°C

Tstg

Storage temperature

- 55 to 175

°C

Tj

Operating junction temperature

Table 3.

Thermal resistance

Symbol

Parameter

Value

Unit

Rthj-case

Thermal resistance junction-case max

3

°C/W

Rthj-pcb

Thermal resistance junction-pcb max (1)

1.

When mounted on 1 inch2, 2 oz Cu.

50

°C/W

Table 4.

Avalanche data

Symbol

Parameter

Value

Unit

IAV

Not-repetitive avalanche current

20

A

EAS

(1)

1.

Starting Tj = 25 °C, ID = IAV, VDD = 24 V

Single pulse avalanche energy

150

mJ

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