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STP260N6F6 Folha de dados(PDF) 1 Page - STMicroelectronics |
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STP260N6F6 Folha de dados(HTML) 1 Page - STMicroelectronics |
1 / 14 page January 2012 Doc ID 17467 Rev 5 1/14 14 STI260N6F6 STP260N6F6 N-channel 60 V, 0.0024 Ω, 120 A STripFET™ VI DeepGATE™ Power MOSFET in TO-220 and I²PAK packages Features ■ Low gate charge ■ Very low on-resistance ■ High avalanche ruggedness Application ■ Switching applications Description These devices are N-channel Power MOSFETs developed using the 6th generation of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFETs exhibits the lowest RDS(on) in all packages. Figure 1. Internal schematic diagram Order codes VDSS RDS(on) max ID STI260N6F6 STP260N6F6 60 V < 0.003 Ω 120 A TO-220 I²PAK 1 2 3 TAB 1 2 3 TAB Table 1. Device summary Order codes Marking Package Packaging STI260N6F6 260N6F6 I²PAK Tube STP260N6F6 TO-220 www.st.com |
Nº de peça semelhante - STP260N6F6 |
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Descrição semelhante - STP260N6F6 |
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