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TIP31G Folha de dados(PDF) 1 Page - ON Semiconductor

Nome de Peças TIP31G
Descrição Electrónicos  Complementary Silicon Plastic Power Transistors
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Fabricante Electrônico  ONSEMI [ON Semiconductor]
Página de início  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

TIP31G Folha de dados(HTML) 1 Page - ON Semiconductor

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© Semiconductor Components Industries, LLC, 2005
September, 2005 − Rev. 10
1
Publication Order Number:
TIP31A/D
TIP31, TIP31A, TIP31B, TIP31C,
(NPN), TIP32, TIP32A, TIP32B,
TIP32C, (PNP)
Complementary Silicon
Plastic Power Transistors
Designed for use in general purpose amplifier and switching
applications.
Features
Collector−Emitter Saturation Voltage −
VCE(sat) = 1.2 Vdc (Max) @ IC = 3.0 Adc
Collector−Emitter Sustaining Voltage −
VCEO(sus) = 40 Vdc (Min) − TIP31, TIP32
= 60 Vdc (Min) − TIP31A, TIP32A
= 80 Vdc (Min) − TIP31B, TIP32B
= 100 Vdc (Min) − TIP31C, TIP32C
High Current Gain − Bandwidth Product
fT = 3.0 MHz (Min) @ IC = 500 mAdc
Compact TO−220 AB Package
Pb−Free Packages are Available*
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector − Emitter Voltage
TIP31, TIP32
TIP31A, TIP32A
TIP31B, TIP32B
TIP31C, TIP32C
VCEO
40
60
80
100
Vdc
Collector−Base Voltage
TIP31, TIP32
TIP31A, TIP32A
TIP31B, TIP32B
TIP31C, TIP32C
VCB
40
60
80
100
Vdc
Emitter−Base Voltage
VEB
5.0
Vdc
Collector Current
Continuous
Peak
IC
3.0
5.0
Adc
Base Current
IB
1.0
Adc
Total Power Dissipation
@ TC = 25_C
Derate above 25
_C
PD
40
0.32
W
W/
_C
Total Power Dissipation
@ TA = 25_C
Derate above 25
_C
PD
2.0
0.016
W
W/
_C
Unclamped Inductive Load Energy (Note 1)
E
32
mJ
Operating and Storage Junction
Temperature Range
TJ, Tstg
– 65 to
+ 150
_C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. IC = 1.8 A, L = 20 mH, P.R.F. = 10 Hz, VCC = 10 V, RBE = 100 W
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
TO−220AB
CASE 221A
STYLE 1
MARKING
DIAGRAM
3 AMPERE
POWER TRANSISTORS
COMPLEMENTARY SILICON
40−60−80−100 VOLTS,
40 WATTS
http://onsemi.com
1
2
3
4
TIP3xx
= Device Code
xx
= 1, 1A, 1B, 1C,
2, 2A, 2B, 2C,
A
= Assembly Location
Y
= Year
WW
= Work Week
G
Pb−Free Package
TIP3xxG
AYWW
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
ORDERING INFORMATION


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