MMSF3P03HD

2

Motorola TMOS Power MOSFET Transistor Device Data

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain–Source Breakdown Voltage

(VGS = 0 Vdc, ID = 250 µAdc)

Temperature Coefficient (Positive)

V(BR)DSS

30

—

—

30

—

—

Vdc

mV/

°C

Zero Gate Voltage Drain Current

(VDS = 30 Vdc, VGS = 0 Vdc)

(VDS = 30 Vdc, VGS = 0 Vdc, TJ = 125°C)

IDSS

—

—

—

—

1.0

10

µAdc

Gate–Body Leakage Current (VGS = ± 20 Vdc, VDS = 0)

IGSS

—

5.0

100

nAdc

ON CHARACTERISTICS(2)

Gate Threshold Voltage

(VDS = VGS, ID = 250 µAdc)

Temperature Coefficient (Negative)

VGS(th)

1.0

—

1.5

3.9

2.0

—

Vdc

mV/

°C

Static Drain–to–Source On–Resistance

(VGS = 10 Vdc, ID = 3.0 Adc)

(VGS = 4.5 Vdc, ID = 1.5 Adc)

RDS(on)

—

—

0.080

0.090

0.100

0.110

Ohm

Forward Transconductance (VDS = 3.0 Vdc, ID = 1.5 Adc)

gFS

3.0

5.0

—

mhos

DYNAMIC CHARACTERISTICS

Input Capacitance

(VDS = 24 Vdc, VGS = 0 Vdc,

f = 1.0 MHz)

Ciss

—

1015

1420

pF

Output Capacitance

(VDS = 24 Vdc, VGS = 0 Vdc,

f = 1.0 MHz)

Coss

—

470

660

Transfer Capacitance

f = 1.0 MHz)

Crss

—

135

190

SWITCHING CHARACTERISTICS(3)

Turn–On Delay Time

(VDS = 15 Vdc, ID = 3.0 Adc,

VGS = 4.5 Vdc,

RG = 6.0 Ω)

td(on)

—

26

52

ns

Rise Time

(VDS = 15 Vdc, ID = 3.0 Adc,

VGS = 4.5 Vdc,

RG = 6.0 Ω)

tr

—

102

204

Turn–Off Delay Time

VGS = 4.5 Vdc,

RG = 6.0 Ω)

td(off)

—

67

134

Fall Time

G = 6.0 Ω)

tf

—

69

138

Turn–On Delay Time

(VDS = 15 Vdc, ID = 3.0 Adc,

VGS = 10 Vdc,

RG = 6.0 Ω)

td(on)

—

14

28

Rise Time

(VDS = 15 Vdc, ID = 3.0 Adc,

VGS = 10 Vdc,

RG = 6.0 Ω)

tr

—

32

64

Turn–Off Delay Time

VGS = 10 Vdc,

RG = 6.0 Ω)

td(off)

—

104

208

Fall Time

G = 6.0 Ω)

tf

—

66

132

Gate Charge

(VDS = 24 Vdc, ID = 3.0 Adc,

VGS = 10 Vdc)

QT

—

32.4

45

nC

(VDS = 24 Vdc, ID = 3.0 Adc,

VGS = 10 Vdc)

Q1

—

2.7

—

(VDS = 24 Vdc, ID = 3.0 Adc,

VGS = 10 Vdc)

Q2

—

9.0

—

Q3

—

6.9

—

SOURCE–DRAIN DIODE CHARACTERISTICS

Forward On–Voltage(1)

(IS = 3.0 Adc, VGS = 0 Vdc)

(IS = 3.0 Adc, VGS = 0 Vdc, TJ = 125°C)

VSD

—

—

1.3

0.85

2.0

—

Vdc

Reverse Recovery Time

(IS = 3.0 Adc,

dIS/dt = 100 A/µs)

trr

—

31

—

ns

(IS = 3.0 Adc,

dIS/dt = 100 A/µs)

ta

—

22

—

(IS = 3.0 Adc,

dIS/dt = 100 A/µs)

tb

—

9.0

—

Reverse Recovery Stored Charge

QRR

—

0.034

—

µC

(1) Negative sign for P–Channel device omitted for clarity.

(2) Pulse Test: Pulse Width

≤ 300 µs, Duty Cycle ≤ 2%.

(3) Switching characteristics are independent of operating junction temperature.