STF13NM60N datasheet(4/21 Pages) STMICROELECTRONICS

Nome de Peças	STF13NM60N

Descrição Electrónicos	N-channel 600 V, 0.28 廓 typ., 11 A MDmesh??II Power MOSFET in TO-220FP, I짼PAK, TO-220, IPAK, TO-247 packages

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Electrical characteristics

STF/I/P/U/W13NM60N

4/21

Doc ID 15420 Rev 5

2

Electrical characteristics

(TCASE = 25 °C unless otherwise specified)

Table 5.

On/off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source

breakdown voltage (VGS = 0)

ID = 1 mA

600

V

IDSS

Zero gate voltage

drain current (VGS = 0)

VDS = 600 V

VDS = 600 V, TC=125 °C

1

100

µA

IGSS

Gate-body leakage

current (VDS = 0)

VGS = ± 25 V

±0.1

µA

VGS(th)

Gate threshold voltage

VDS = VGS, ID = 250 µA

2

3

4

V

RDS(on)

Static drain-source

on-resistance

VGS = 10 V, ID = 5.5 A

0.28

0.36

Ω

Table 6.

Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max. Unit

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS = 50 V, f = 1 MHz,

VGS = 0

-

790

60

3.6

-

pF

Coss eq.

(1)

1.

Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS

increases from 0 to 80% VDS

Equivalent output

capacitance

VGS = 0, VDS = 0 to 480 V

-

135

-

pF

Qg

Qgs

Qgd

Total gate charge

Gate-source charge

Gate-drain charge

VDD = 480 V, ID = 11 A,

VGS = 10 V,

(see Figure 20)

-

27

4

14

-

nC

RG

Gate input resistance

f=1 MHz open drain

-

4.7

-

Ω

Nº de peça semelhante - STF13NM60N

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STMicroelectronics	STF13NM60N	989Kb / 21P	N-channel 600 V, 0.28 ohm typ., 11 A MDmesh II Power MOSFET in TO-220FP, I2PAK, TO-220, IPAK, TO-247 packages
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Descrição semelhante - STF13NM60N

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