MMSF5P02HD

3

Motorola TMOS Power MOSFET Transistor Device Data

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain–to–Source Breakdown Voltage

(Cpk

≥ 2.0)

(1) (3)

(VGS = 0 Vdc, ID = 0.25 mAdc)

Temperature Coefficient (Positive)

V(BR)DSS

20

—

—

10

—

—

Vdc

mV/

°C

Zero Gate Voltage Drain Current

(VDS = 16 Vdc, VGS = 0 Vdc)

(VDS = 16 Vdc, VGS = 0 Vdc, TJ = 125°C)

IDSS

—

—

—

—

1.0

25

µAdc

Gate–Body Leakage Current (VGS = ± 8.0 Vdc, VDS = 0)

IGSS

—

—

100

nAdc

ON CHARACTERISTICS(1)

Gate Threshold Voltage

(Cpk

≥ 2.0)

(1) (3)

(VDS = VGS, ID = 0.25 mAdc)

Threshold Temperature Coefficient (Negative)

VGS(th)

0.7

—

0.9

2.6

1.4

—

Vdc

mV/

°C

Static Drain–to–Source On–Resistance

(Cpk

≥ 2.0)

(1) (3)

(VGS = 4.5 Vdc, ID = 6.4 Adc)

(VGS = 2.5 Vdc, ID = 5.1 Adc)

RDS(on)

—

—

22

35

30

45

m

Ω

On–State Drain Current

(VDS ≤ 5.0 V, VGS = 4.5 V)

(VDS ≤ 5.0 V, VGS = 2.5 V)

ID(on)

10

5.0

—

—

—

—

A

Forward Transconductance (VDS = 9.0 Vdc, ID = 6.4 Adc)

(1)

gFS

14

18

—

Mhos

DYNAMIC CHARACTERISTICS

Input Capacitance

(V

16 Vdc V

0 Vdc

Ciss

—

1400

1960

pF

Output Capacitance

(VDS = 16 Vdc, VGS = 0 Vdc,

f = 1.0 MHz)

Coss

—

925

1300

Transfer Capacitance

f = 1.0 MHz)

Crss

—

370

520

SWITCHING CHARACTERISTICS(2)

Turn–On Delay Time

(V

6 0 Vd

I

1 0 Ad

td(on)

—

19

40

ns

Rise Time

(VDD = 6.0 Vdc, ID = 1.0 Adc,

VGS =4 5Vdc

tr

—

28

55

Turn–Off Delay Time

VGS = 4.5 Vdc,

RG = 6.0 Ω) (1)

td(off)

—

130

200

Fall Time

G

)( )

tf

—

90

150

Gate Charge

See Figure 8

(V

6 0 Vd

I

6 4 Ad

QT

—

27.3

38

nC

See Figure 8

(VDS = 6.0 Vdc, ID = 6.4 Adc,

Q1

—

3.4

—

( DS

, D

,

VGS = 4.5 Vdc) (1)

Q2

—

12

—

Q3

—

8.0

—

SOURCE–DRAIN DIODE CHARACTERISTICS

Forward On–Voltage(1)

(IS = 2.5 Adc, VGS = 0 Vdc) (1)

(IS = 2.5 Adc, VGS = 0 Vdc, TJ = 125°C)

VSD

—

—

0.77

0.6

1.2

—

Vdc

Reverse Recovery Time

See Figure 15

(I

2 5 Ad

V

0 Vd

trr

—

95

180

ns

See Figure 15

(IS = 2.5 Adc, VGS = 0 Vdc,

ta

—

35

—

( S

,

GS

,

dIS/dt = 100 A/µs) (1)

tb

—

60

—

Reverse Recovery Stored Charge

QRR

—

0.151

—

µC

(1) Pulse Test: Pulse Width

≤ 300 µs, Duty Cycle ≤ 2%.

(2) Switching characteristics are independent of operating junction temperature.

(3) Reflects typical values.

Cpk =

Max limit – Typ

3 x SIGMA

(4) Repetitive rating; pulse width limited by maximum junction temperature.