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STB26NM60N Folha de dados(PDF) 10 Page - STMicroelectronics

Nome de Peças STB26NM60N
Descrição Electrónicos  N-channel 600 V, 0.135 ohm typ., 20 A MDmesh II Power MOSFET in D2PAK, I2PAK, TO-220, TO-220FP and TO-247 packages
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Fabricante Electrônico  STMICROELECTRONICS [STMicroelectronics]
Página de início  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STB26NM60N Folha de dados(HTML) 10 Page - STMicroelectronics

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Test circuits
STB26NM60N, STF26NM60, STI26NM60N, STP26NM60N, STW26NM60N
10/23
Doc ID 15642 Rev 5
3
Test circuits
Figure 18.
Switching times test circuit for
resistive load
Figure 19.
Gate charge test circuit
Figure 20.
Test circuit for inductive load
switching and diode recovery times
Figure 21.
Unclamped inductive load test
circuit
Figure 22.
Unclamped inductive waveform
Figure 23.
Switching time waveform
AM01468v1
VGS
PW
VD
RG
RL
D.U.T.
2200
μF
3.3
μF
VDD
AM01469v1
VDD
47k
Ω
1k
Ω
47k
Ω
2.7k
Ω
1k
Ω
12V
Vi=20V=VGMAX
2200
μF
PW
IG=CONST
100
Ω
100nF
D.U.T.
VG
AM01470v1
A
D
D.U.T.
S
B
G
25
Ω
A
A
B
B
RG
G
FAST
DIODE
D
S
L=100
μH
μF
3.3
1000
μF
VDD
AM01471v1
Vi
Pw
VD
ID
D.U.T.
L
2200
μF
3.3
μF
VDD
AM01472v1
V(BR)DSS
VDD
VDD
VD
IDM
ID
AM01473v1
VDS
ton
tdon
tdoff
toff
tf
tr
90%
10%
10%
0
0
90%
90%
10%
VGS


Nº de peça semelhante - STB26NM60N

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Descrição semelhante - STB26NM60N

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STB18N60M2 STMICROELECTRONICS-STB18N60M2_V01 Datasheet
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DS9714 - Rev 4 - November 2018
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