SI2307DS-T1 datasheet(2/5 Pages) VISHAY

Nome de Peças	SI2307DS-T1

Descrição Electrónicos	P-Channel 30-V (D-S) MOSFET

Download	5 Pages

Scroll/Zoom	100%

Fabricante Electrônico	VISHAY [Vishay Siliconix]

Página de início	http://www.vishay.com

Logo

2 / 5 page

Si2307DS

Vishay Siliconix

www.vishay.com

S FaxBack 408-970-5600

2-2

Document Number: 70843

S-60570—Rev. A, 16-Nov-98

SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)

Limits

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Static

Drain-Source Breakdown Voltage

V(BR)DSS

VGS = 0 V, ID = –10 mA

–30

V

Gate-Threshold Voltage

VGS(th)

VDS = VGS, ID = –250 mA

–1.0

V

Gate-Body Leakage

IGSS

VDS = 0 V, VGS = "20 V

"100

nA

Zero Gate Voltage Drain Current

IDSS

VDS = –24 V, VGS = 0 V

–1

mA

Zero Gate Voltage Drain Current

IDSS

TJ = 55

_C

–10

mA

On-State Drain Currenta

ID(on)

VDS v –5 V, VGS = –10 V

–6

A

Drain Source On Resistancea

rDS( )

VGS = –10 V, ID = –3 A

0.064

0.080

W

Drain-Source On-Resistancea

rDS(on)

VGS = –4.5 V, ID = –2.5 A

0.103

0.140

W

Forward Transconductancea

gfs

VDS = –10V, ID = –3 A

4.5

S

Diode Forward Voltage

VSD

IS = –1.25 A, VGS = 0 V

–1.2

V

Dynamicb

Total Gate Charge

Qg

V

15V V

10V

10

15

C

Gate-Source Charge

Qgs

VDS = –15 V, VGS = –10 V

ID ^ –3 A

1.9

nC

Gate-Drain Charge

Qgd

ID ^ 3 A

2

Input Capacitance

Ciss

V15 V V

0 f

1 MH

565

F

Output Capacitance

Coss

VDS = –15 V, VGS = 0, f = 1 MHz

126

pF

Reverse Transfer Capacitance

Crss

75

Switchingb

Turn-On Time

td(on)

V15 V R

15

W

10

20

Turn-On Time

tr

VDD = –15 V, RL = 15 W

ID ^ –1.0 A, VGEN = –10 V

9

20

ns

Turn-Off Time

td(off)

ID ^ –1.0 A, VGEN = –10 V

RG = 6 W

27

50

ns

Turn-Off Time

tf

7

16

Notes

a.

Pulse test: PW

v300 ms duty cycle v2%.

b.

For DESIGN AID ONLY, not subject to production testing.

c.

Switching time is essentially independent of operating temperature.

Nº de peça semelhante - SI2307DS-T1

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
VBsemi Electronics Co.,...	SI2307DS-T1-GE3	1Mb / 9P	P-Channel 30 V (D-S) MOSFET

More results

Descrição semelhante - SI2307DS-T1

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
Vishay Siliconix	SI2341DS	43Kb / 5P	P-Channel 30-V (D-S) MOSFET Rev. B, 11-Aug-03
Vishay Siliconix	SI4835BDY	90Kb / 6P	P-Channel 30-V (D-S) MOSFET Rev. D, 25-Oct-0
Anachip Corp	AF4407	263Kb / 5P	P-Channel 30-V (D-S) MOSFET
Vishay Siliconix	SI7423DN	173Kb / 3P	P-Channel 30-V (D-S) MOSFET 24-May-04
	SI2303ADS	39Kb / 4P	P-Channel, 30-V (D-S) MOSFET Rev. B, 29-Apr-02
	SI3481DV	67Kb / 5P	P-Channel 30-V (D-S) MOSFET Rev. B, 16-Feb-04
DinTek Semiconductor Co...	DTM4415	286Kb / 9P	P-Channel 30-V (D-S) MOSFET
Vishay Siliconix	SI4435DDY-T1-GE3	279Kb / 10P	P-Channel 30-V (D-S) MOSFET Rev. C, 18-May-09
	SI7121DN	552Kb / 13P	P-Channel 30-V (D-S) MOSFET Rev. C, 23-Jun-08
	SI4825DDY-T1	242Kb / 10P	P-Channel 30-V (D-S) MOSFET Rev. A, 13-Oct-08
	SI7129DN	566Kb / 13P	P-Channel 30 V (D-S) MOSFET Rev. B, 06-Sep-10

More results

SI2307DS-T1 Folha de dados(PDF) 2 Page - Vishay Siliconix

SI2307DS-T1 Folha de dados(HTML) 2 Page - Vishay Siliconix

Nº de peça semelhante - SI2307DS-T1

Descrição semelhante - SI2307DS-T1

Html Pages

1 2 3 4 5

Folha de dados Download

Ligação URL