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BCW68G Folha de dados(PDF) 3 Page - Fairchild Semiconductor |
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BCW68G Folha de dados(HTML) 3 Page - Fairchild Semiconductor |
3 / 4 page PNP General Purpose Amplifier (continued) Typical Characteristics (continued) Base-Emitter Saturation Voltage vs Collector Current 110 100 500 0 0.2 0.4 0.6 0.8 1 I - COLLECTOR CURRENT (mA) C 25 °C - 40 ºC 125 ºC β = 10 Base Emitter ON Voltage vs Collector Current 0.1 1 10 25 0 0.2 0.4 0.6 0.8 1 I - COLLECTOR CURRENT (mA) C V = 5V CE 25 °C - 40 ºC 125 ºC Collector-Cutoff Current vs. Ambient Temperature 25 50 75 100 125 0.01 0.1 1 10 100 T - AMBIENT TEMPERATURE ( C) A º V = 35V CB Input and Output Capacitance vs Reverse Bias Voltage 0.1 1 10 50 0 4 8 12 16 20 REVERSE BIAS VOLTAGE (V) C ob C ib Power Dissipation vs Ambient Temperature 0 25 50 75 100 125 150 0 50 100 150 200 250 300 350 TEMPERATURE ( C) o SOT-23 |
Nº de peça semelhante - BCW68G |
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Descrição semelhante - BCW68G |
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