BD13616 datasheet(1/4 Pages) FAIRCHILD

Nome de Peças	BD13616

Descrição Electrónicos	Medium Power Linear and Switching Applications

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Fabricante Electrônico	FAIRCHILD [Fairchild Semiconductor]

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Rev. A, February 2000

PNP Epitaxial Silicon Transistor

Absolute Maximum Ratings T

C=25°C unless otherwise noted

Electrical Characteristics T

C=25°C unless otherwise noted

* Pulse Test: PW=350

µs, duty Cycle=2% Pulsed

hFE Classificntion

Symbol

Parameter

Value

Units

VCBO

Collector-Base Voltage

: BD136

: BD138

: BD140

- 45

- 60

- 80

V

VCEO

Collector-Emitter Voltage

: BD136

: BD138

: BD140

- 45

- 60

- 80

V

VEBO

Emitter-Base Voltage

- 5

V

IC

Collector Current (DC)

- 1.5

A

ICP

Collector Current (Pulse)

- 3.0

A

IB

Base Current

- 0.5

A

PC

Collector Dissipation (TC=25°C)

12.5

W

PC

Collector Dissipation (Ta=25°C)

1.25

W

TJ

Junction Temperature

150

°C

TSTG

Storage Temperature

- 55 ~ 150

°C

Symbol

Parameter

Test Condition

Min.

Typ.

Max.

Units

VCEO(sus)

* Collector-Emitter Sustaining Voltage

: BD136

: BD138

: BD140

IC = - 30mA, IB = 0

- 45

- 60

- 80

V

ICBO

Collector Cut-off Current

VCB = - 30V, IE = 0

- 0.1

µA

IEBO

Emitter Cut-off Current

VEB = - 5V, IC = 0

- 10

µA

hFE1

hFE2

hFE3

* DC Current Gain

VCE = - 2V, IC = - 5mA

VCE = - 2V, IC = - 0.5A

VCE = - 2V, IC = - 150mA

25

40

250

VCE(sat)

* Collector-Emitter Saturation Voltage

IC = - 500mA, IB = - 50mA

- 0.5

V

VBE(on)

* Base-Emitter ON Voltage

VCE = - 2V, IC = - 0.5A

- 1

V

Classification

6

10

16

hFE3

40 ~ 100

63 ~ 160

100 ~ 250

BD136/138/140

Medium Power Linear and Switching

Applications

• Complement to BD135, BD137 and BD139 respectively

1

TO-126

1. Emitter

2.Collector

3.Base

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