AM2329P datasheet(1/3 Pages) ANALOGPOWER

Nome de Peças	AM2329P

Descrição Electrónicos	P-Channel 30V (D-S) MOSFET

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Fabricante Electrônico	ANALOGPOWER [Analog Power]

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AM2329P

Analog Power

April, 2004 - Rev. A

PRELIMINARY

Publication Order Number:

DS-AM2329_B

These miniature surface mount MOSFETs

utilize High Cell Density process. Low r

DS(on)

assures minimal power loss and conserves

energy, making this device ideal for use in

power management circuitry. Typical

applications are power switch, power

management in portable and battery-powered

products such as computers, printers, PCMCIA

cards, cellular and cordless telephones.

VDS (V)

rDS(on) (Ω)ID (A)

0.112 @ VGS = 10 V

2.5

0.172 @ VGS = 4.5V

2.0

PRODUCT SUMMARY

-30

P-Channel 30V (D-S) MOSFET

•Low r

DS(on) Provides Higher Efficiency and

Extends Battery Life

•

Low Gate Charge

•

Fast Switch

•

Miniature SOT-23 Surface Mount Package

Saves Board Space

Notes

a.

Surface Mounted on 1” x 1” FR4 Board.

b.

Pulse width limited by maximum junction temperature

Symbol Maximum Units

VDS

-30

VGS

±20

TA=25

oC2.5

TA=70

oC1.7

IDM

±12

IS

1.25

A

TA=25

oC1.3

TA=70

oC0.8

TJ, Tstg -55 to 150

oC

Continuous Source Current (Diode Conduction)

a

ABSOLUTE MAXIMUM RATINGS (TA = 25

oC UNLESS OTHERWISE NOTED)

Parameter

Pulsed Drain Current

b

V

Gate-Source Voltage

Drain-Source Voltage

Continuous Drain Current

a

ID

A

Power Dissipation

a

PD

Operating Junction and Storage Temperature Range

W

Symbol Maximum Units

t <= 5 sec

100

Steady-State

166

THERMAL RESISTANCE RATINGS

Parameter

oC/W

Maximum Junction-to-Ambient

a

RTHJA

D

S

G

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