SI2305CDS_13 datasheet(1/10 Pages) VISHAY

Nome de Peças	SI2305CDS

Descrição Electrónicos	P-Channel 8 V (D-S) MOSFET

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Vishay Siliconix

Si2305CDS

Document Number: 64847

S10-0720-Rev. C, 29-Mar-10

www.vishay.com

1

P-Channel 8 V (D-S) MOSFET

FEATURES

•

Halogen-free According to IEC 61249-2-21

Definition

•

TrenchFET® Power MOSFET

•

100 % Rg Tested

•

Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

•

Load Switch for Portable Devices

•

DC/DC Converter

PRODUCT SUMMARY

VDS (V)

RDS(on) (Ω)

ID (A)

d

Qg (Typ.)

- 8

0.035 at VGS = - 4.5 V

- 5.8

12 nC

0.048 at VGS = - 2.5 V

- 5.0

0.065 at VGS = - 1.8 V

- 4.3

Ordering Information: Si2305CDS-T1-GE3 (Lead (Pb)-free and Halogen-free)

G

TO-236

(SOT-23)

S

D

Top View

2

3

1

* Marking Code

Si2305CDS (N5)*

S

G

D

P-Channel MOSFET

Notes:

a. Surface mounted on 1" x 1" FR4 board.

b. t = 5 s.

c. Maximum under steady state conditions is 175 °C/W.

d. TC = 25 °C.

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

VDS

- 8

V

Gate-Source Voltage

VGS

± 8

Continuous Drain Current (TJ = 150 °C)

TC = 25 °C

ID

- 5.8

A

TC = 70 °C

- 4.7

TA = 25 °C

- 4.4a, b

TA = 70 °C

- 3.5a, b

Pulsed Drain Current (10 µs Pulse Width)

IDM

- 20

Continuous Source-Drain Diode Current

TC = 25 °C

IS

- 1.4

TA = 25 °C

- 0.8a, b

Maximum Power Dissipation

TC = 25 °C

PD

1.7

W

TC = 70 °C

1.1

TA = 25 °C

0.96a, b

TA = 70 °C

0.62a, b

Operating Junction and Storage Temperature Range

TJ, Tstg

- 55 to 150

°C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

Maximum Junction-to-Ambienta, c

t

≤ 5 s

RthJA

100

130

°C/W

Maximum Junction-to-Foot (Drain)

Steady State

RthJF

60

75

Nº de peça semelhante - SI2305CDS_13

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
Vishay Siliconix	SI2305CDS-T1-GE3	229Kb / 10P	P-Channel 8 V (D-S) MOSFET Rev. C, 29-Mar-10
VBsemi Electronics Co.,...	SI2305CDS-T1-GE3	1Mb / 9P	P-Channel 20-V (D-S) MOSFET
Vishay Siliconix	SI2305CDS	195Kb / 9P	P-Channel 8 V (D-S) MOSFET 01-Jan-2022

More results

Descrição semelhante - SI2305CDS_13

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
Vishay Siliconix	SI1315DL-T1-GE3	248Kb / 11P	P-Channel 8 V (D-S) MOSFET Rev. A, 29-Nov-10
	SIA427ADJ	231Kb / 9P	P-Channel 8 V (D-S) MOSFET Rev. B, 21-May-12
	SI8439DB	252Kb / 11P	P-Channel 8 V (D-S) MOSFET Rev. C, 20-Jul-15
	SI2305CDS	105Kb / 5P	P-Channel 8 V (D-S) MOSFET Rev. A, 07-Sep-09
	SI8469DB	107Kb / 8P	P-Channel 8 V (D-S) MOSFET Rev. A, 08-Nov-10
	SI2305CD	195Kb / 9P	P-Channel 8 V (D-S) MOSFET 09-Jul-2021
	SI2329DS	178Kb / 4P	P-Channel 8 V (D-S) MOSFET Rev. A, 04-Jul-11
	SI2305ADS	139Kb / 7P	P-Channel 8-V (D-S) MOSFET Rev. C, 10-Nov-08
	SIB437EDKT	177Kb / 8P	P-Channel 8 V (D-S) MOSFET Rev. A, 14-Feb-11
	SI1051X	138Kb / 6P	P-Channel 8-V (D-S) MOSFET Rev. B, 24-Mar-08

More results

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