STFI10N62K3 datasheet(4/17 Pages) STMICROELECTRONICS

Nome de Peças	STFI10N62K3

Descrição Electrónicos	N-channel 620 V, 0.68 廓 typ., 8.4 A SuperMESH3?

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Fabricante Electrônico	STMICROELECTRONICS [STMicroelectronics]

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Electrical characteristics

STF10N62K3, STFI10N62K3, STI10N62K3, STP10N62K3

4/17

Doc ID 15640 Rev 4

2

Electrical characteristics

(Tcase = 25 °C unless otherwise specified)

Table 4.

On /off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source

breakdown voltage

ID = 1 mA, VGS = 0

620

V

IDSS

Zero gate voltage

drain current (VGS = 0)

VDS = 620 V

VDS = 620 V, TC=125 °C

1

50

µA

IGSS

Gate-body leakage

current (VDS = 0)

VGS = ± 20 V

±10

µA

VGS(th)

Gate threshold voltage VDS = VGS, ID = 100 µA

3

3.75

4.5

V

RDS(on)

Static drain-source on

resistance

VGS = 10 V, ID = 4 A

0.68

0.75

Ω

Table 5.

Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

gfs

(1)

1.

Pulsed: pulse duration = 300 µs, duty cycle 1.5%

Forward

transconductance

VDS = 15 V, ID = 4 A

-

6

-

S

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS = 50 V, f = 1 MHz,

VGS = 0

-

1250

138

16

-

pF

Co(tr)

(2)

2.

Coss eq. time related is defined as a constant equivalent capacitance giving the same charging time as Coss

when VDS increases from 0 to 80% VDSS

Equivalent

capacitance time

-

56

-

pF

Co(er)

(3)

3.

Coss eq. energy related is defined as a constant equivalent capacitance giving the same stored energy as

Coss when VDS increases from 0 to 80% VDSS

Equivalent

capacitance energy

-

38

-

pF

RG

Gate input resistance

f=1 MHz Gate DC Bias=0 Test

signal level = 20 mV open

drain

-3.5

-

Ω

Qg

Qgs

Qgd

Total gate charge

Gate-source charge

Gate-drain charge

VDD = 496 V, ID = 8 A,

VGS = 10 V

(see

Figure 18)

-

42

7.4

23

-

nC

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Descrição semelhante - STFI10N62K3

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
STMicroelectronics	STF4N62K3	1Mb / 19P	N-channel 620 V, 1.7 廓 typ., 3.8 A SuperMESH3 Power MOSFET
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STATEK CORPORATION	STD3LN62K3	1Mb / 21P	N-channel 620 V, 2.5 廓 , 2.5 A SuperMESH3??Power MOSFE DPAK, TO-220FP, TO-220, IPAK
STMicroelectronics	STF3LN62K3	1Mb / 21P	N-channel 620 V, 2.5 廓 , 2.5 A SuperMESH3??Power MOSFET DPAK, TO-220FP, TO-220, IPAK February 2011 Rev 1
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