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Os motores de busca de Datasheet de Componentes eletrônicos |
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AM4960N Folha de dados(PDF) 1 Page - Analog Power |
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AM4960N Folha de dados(HTML) 1 Page - Analog Power |
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1 / 5 page  1 AM4960N Analog Power PRELIMINARY Publication Order Number: DS-AM4960_A These miniature surface mount MOSFETs utilize a high cell density trench process to provide low r DS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. VDS (V) rDS(on) m(Ω)ID (A) 89 @VGS=10V ±4.0 104 @VGS=4.5V ±3.7 PRODUCT SUMMARY 60 N-Channel 60-V (D-S) MOSFET •Low r DS(on) provides higher efficiency and extends battery life • Low thermal impedance copper leadframe SOIC-8 saves board space • Fast switching speed • High performance trench technology Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature Symbol Limit Units VDS 60 VGS ±20 TA=25 oC±4.0 TA=70 oC±3.3 IDM ±25 IS 2 A TA=25 oC2.1 TA=70 oC1.3 TJ, Tstg -55to150 oC Continuous Source Current (Diode Conduction) a ABSOLUTEMAXIMUMRATINGS(TA = 25 oCUNLESSOTHERWISENOTED) Parameter Pulsed DrainCurrent b V Gate-Source Voltage Drain-Source Voltage Continuous DrainCurrent a ID A Power Dissipation a PD OperatingJunctionandStorage Temperature Range W Symbol Maximum Units t <= 10 sec 62.5 oC/W t <= 5 sec 110 oC/W THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient a RθJA SOIC-8 Top View G1 S1 S2 1 2 3 4 G2 D1 D1 D2 8 7 6 5 D2 D 2 G 2 N-Channel MOSFET S 2 D 1 G 1 N-Channel MOSFET S 1 |
Nº de peça semelhante - AM4960N |
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Descrição semelhante - AM4960N |
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