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FDC6306P Folha de dados(PDF) 4 Page - Fairchild Semiconductor

Nome de Peças FDC6306P
Descrição Electrónicos  Dual P-Channel 2.5V Specified PowerTrench??MOSFET
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Fabricante Electrônico  FAIRCHILD [Fairchild Semiconductor]
Página de início  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FDC6306P Folha de dados(HTML) 4 Page - Fairchild Semiconductor

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FDC6306P Rev. C
Typical Characteristics (continued)
Figure 7. Gate-Charge Characteristics.
Figure 8. Capacitance Characteristics.
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient themal response will change depending on the circuit board design.
0.1
0.2
0.5
1
2
5
10
20
50
0.01
0.03
0.1
0.3
1
3
10
30
-V
, DRAIN-SOURCE VOLTAGE (V)
RD
S(O
N) L
IM
IT
DS
V
= -4.5V
SINGLE PULSE
R
= 180°C/W
T
= 25°C
θJA
GS
A
DC
1s
100
ms
10m
s
1m
s
100u
s
0.01
0.1
1
10
100
300
0
1
2
3
4
5
SINGLE PULSE TIME (SEC)
SINGLE PULSE
R
=180°C/W
T = 25°C
θJA
A
0.0001
0.001
0.01
0.1
1
10
100
300
0.01
0.02
0.05
0.1
0.2
0.5
1
t , TIME (sec)
1
Single Pulse
D = 0.5
0.1
0.05
0.02
0.01
0.2
Duty Cycle, D = t / t
1
2
T - T
= P * R
(t)
θJA
A
J
P(pk)
t1
t 2
R
(t) = r(t) * R
R
=180°C/W
θJA
θJA
θJA
0
1234
0
1
2
3
4
5
Q
, GAT E CHARGE (nC)
g
V
= -5V
DS
-15V
I
= -1.9A
D
-10V
0.1
0.2
0.5
1
2
5
10
20
30
100
300
1000
-V
, DRAIN T O SOURCE V OLTAGE (V)
DS
Ciss
f = 1 MHz
V
= 0 V
GS
Coss
Crss


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