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FDD2570 Folha de dados(PDF) 4 Page - Fairchild Semiconductor |
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FDD2570 Folha de dados(HTML) 4 Page - Fairchild Semiconductor |
4 / 5 page FDD2570 Rev C(W) Typical Characteristics 0 2 4 6 8 10 0 102030 40 Qg, GATE CHARGE (nC) ID = 4.7 A VDS = 25 V 75 50 V 0 500 1000 1500 2000 2500 3000 0 10 2030405060708090 100 VDS, DRAIN TO SOURCE VOLTAGE (V) CISS CRSS COSS f = 1MHz VGS = 0 V Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics. 0.001 0.01 0.1 1 10 100 0.1 1 10 100 1000 VDS, DRAIN-SOURCE VOLTAGE (V) DC 10s 1s 100ms RDS(ON) LIMIT VGS = 10V SINGLE PULSE RθJA = 96 oC/W TA = 25 o C 10ms 1ms 100us 0 20 40 60 80 0.01 0.1 1 10 100 1000 t1, TIME (sec) SINGLE PULSE RθJA = 96 °C/W TA = 25°C Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. 0.001 0.01 0.1 1 0.001 0.01 0.1 1 10 100 1000 t1, TIME (sec) RθJA(t) = r(t) + RθJA RθJA = 96 °C/W TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 P(pk) t1 t2 SINGLE 0.01 0.02 0.05 0.1 0.2 D = 0.5 Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. |
Nº de peça semelhante - FDD2570 |
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Descrição semelhante - FDD2570 |
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