FDD6030 datasheet(2/6 Pages) FAIRCHILD

Nome de Peças	FDD6030

Descrição Electrónicos	N-Channel Logic Level Enhancement Mode Field Effect Transistor

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Fabricante Electrônico	FAIRCHILD [Fairchild Semiconductor]

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FDD6030L Rev. A1

Electrical Characteristics

TC=25

oC unless otherwise noted

Symbol

Parameter

Test Conditions

Min

Typ

Max

Units

OFF CHARACTERISTICS

BVDSS

Drain-Source Breakdown Voltage

VGS = 0 V, ID = 250

µA30

V

IDSS

Zero Gate Voltage Drain Current

VDS = 24 V, VGS = 0 V

10

µA

IGSSF

Gate-Body Leakage, Forward

VGS = 20 V, VDS = 0 V

100

nA

IGSSR

Gate-Body Leakage, Reverse

VGS = -20 V, VDS = 0 V

-100

nA

ON CHARACTERISTICS (Note 2)

VGS(TH)

Gate Threshold Voltage

VDS = VGS, ID = 250

µA1

3

V

RDS(ON)

Static Drain-Source

On-Resistance

VGS = 10 V, ID = 12 A

VGS = 4.5 V, ID = 10 A

0.0135

0.0200

Ω

DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS

IS

Maximum Continuous Drain-Source Diode Forward Current

2.7

A

VSD

Drain-Source Diode Forward

Voltage

VGS = 0 V, IS = 2.7 A

1.2

V

Notes:

1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the drain tab.

RθJC is guaranteed by design while RθCAis determined by the user's board design.

Scale 1 : 1 on letter size paper

2. Pulse Test: Pulse Width

≤ 300 µs, Duty Cycle ≤ 2.0%

a) RθJA= 40

oC/W when mounted on a

1 in2 pad of 2oz copper.

b) RθJA= 96

oC/W when mounted on

a 0.076 in2 pad of 2oz copper.

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FDD6030 Folha de dados(PDF) 2 Page - Fairchild Semiconductor

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