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STU75N3LLH6-S Folha de dados(PDF) 5 Page - STMicroelectronics |
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STU75N3LLH6-S Folha de dados(HTML) 5 Page - STMicroelectronics |
5 / 21 page STD/P/U75N3LLH6, STU75N3LLH6-S Electrical characteristics Doc ID 15978 Rev 4 5/21 Table 6. Switching times Symbol Parameter Test conditions Min. Typ. Max Unit td(on) tr td(off) tf Turn-on delay time Rise time Turn-off delay time Fall time VDD = 15 V, ID = 37.5 A RG =4.7 Ω VGS = 5 V (see Figure 13) - 9.5 30 37 12 - ns ns ns ns Table 7. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit ISD ISDM (1) 1. Pulse width limited by safe operating area. Source-drain current Source-drain current (pulsed) - 75 300 A A VSD (2) 2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5% Forward on voltage ISD = 37.5 A, VGS = 0 - 1.1 V trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 75 A, di/dt = 100 A/µs, VDD = 24 V (see Figure 15) - 24 16.8 1.4 ns nC A |
Nº de peça semelhante - STU75N3LLH6-S |
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Descrição semelhante - STU75N3LLH6-S |
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