STP24NM60N datasheet(3/19 Pages) STMICROELECTRONICS

Nome de Peças	STP24NM60N

Descrição Electrónicos	N-channel 600 V, 0.168 廓, 17 A MDmesh??II Power MOSFET

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Fabricante Electrônico	STMICROELECTRONICS [STMicroelectronics]

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STF24NM60N, STI24NM60N, STP24NM60N, STW24NM60N

Electrical ratings

Doc ID 18047 Rev 3

3/19

1

Electrical ratings

Table 2.

Absolute maximum ratings

Symbol

Parameter

Value

Unit

I2PAK

TO-220

TO-247

TO-220FP

VGS

Gate- source voltage

± 30

V

ID

Drain current (continuous) at TC = 25 °C

17

17 (1)

1.

Limited only by maximum temperature allowed.

A

ID

Drain current (continuous) at TC = 100 °C

11

11 (1)

A

IDM

(2)

2.

Pulse width limited by safe operating area.

Drain current (pulsed)

68

68 (1)

A

PTOT

Total dissipation at TC = 25 °C

125

30

W

dv/dt(3)

3.

ISD ≤ 17 A, di/dt ≤ 400 A/µs, peak VDS ≤V(BR)DSS, VDD = 80% V(BR)DSS

Peak diode recovery voltage slope

15

V/ns

VISO

Insulation withstand voltage (RMS) from all three

leads to external heat sink

(t=1 s;TC=25 °C)

2500

V

TJ

Tstg

Operating junction temperature

Storage temperature

-55 to 150

°C

Table 3.

Thermal data

Symbol

Parameter

Value

Unit

TO-220FP

I2PAK

TO-220

TO-247

Rthj-case

Thermal resistance junction-case

max.

41

°C/W

Rthj-amb

Thermal resistance junction-ambient

max.

62.5

50

°C/W

TJ

Maximum lead temperature for

soldering purpose

300

°C

Table 4.

Avalanche characteristics

Symbol

Parameter

Value

Unit

IAR

Avalanche current, repetitive or not-

repetitive (pulse width limited by TJ max)

6A

EAS

Single pulse avalanche energy

(starting TJ = 25 °C, ID = IAR, VDD = 50 V)

300

mJ

Nº de peça semelhante - STP24NM60N

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Inchange Semiconductor ...	STP24NM60N	320Kb / 2P	isc N-Channel MOSFET Transistor

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Descrição semelhante - STP24NM60N

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
STMicroelectronics	STB24NM60N	899Kb / 15P	N-channel 600 V, 0.168, 17 A MDmesh II Power MOSFET February 2011 Rev 1
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