FDS6670A datasheet(2/8 Pages) FAIRCHILD

Nome de Peças	FDS6670A

Descrição Electrónicos	Single N-Channel, Logic Level, PowerTrenchTM MOSFET

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Fabricante Electrônico	FAIRCHILD [Fairchild Semiconductor]

Página de início	http://www.fairchildsemi.com

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Electrical Characteristics

(T

A = 25

OC unless otherwise noted )

Symbol

Parameter

Conditions

Min

Typ

Max

Units

OFF CHARACTERISTICS

BV

DSS

Drain-Source Breakdown Voltage

V

GS = 0 V, I D = 250 µA

30

V

∆BV

DSS/∆TJ

Breakdown Voltage Temp. Coefficient

I

D = 250 µA, Referenced to 25

oC

20

mV /

oC

I

DSS

Zero Gate Voltage Drain Current

V

DS = 24 V, VGS = 0 V

1

µA

T

J = 55°C

10

µA

I

GSSF

Gate - Body Leakage, Forward

V

GS = 20 V, VDS = 0 V

100

nA

I

GSSR

Gate - Body Leakage, Reverse

V

GS = -20 V, VDS = 0 V

-100

nA

ON CHARACTERISTICS (Note 2)

V

GS(th)

Gate Threshold Voltage

V

DS = VGS, ID = 250 µA

1

1.6

3

V

∆V

GS(th)/∆TJ

Gate Threshold Voltage Temp. Coefficient

I

D = 250 µA, Referenced to 25

oC

-4.5

mV /

oC

R

DS(ON)

Static Drain-Source On-Resistance

V

GS = 10 V, I D = 13 A

0.0063

0.008

Ω

T

J =125°C

0.009

0.014

V

GS = 4.5 V, I D = 10.5 A

0.0082

0.01

I

D(ON)

On-State Drain Current

V

GS = 10 V, VDS = 5 V

50

A

g

FS

Forward Transconductance

V

DS = 15 V, I D = 13 A

50

S

DYNAMIC CHARACTERISTICS

C

iss

Input Capacitance

V

DS = 15 V, VGS = 0 V,

f = 1.0 MHz

3200

pF

C

oss

Output Capacitance

820

pF

C

rss

Reverse Transfer Capacitance

400

pF

SWITCHING CHARACTERISTICS (Note 2)

t

D(on)

Turn - On Delay Time

V

DS = 10 V, I D= 1 A

15

27

ns

t

r

Turn - On Rise Time

V

GS = 10 V , RGEN = 6 Ω

15

27

ns

t

D(off)

Turn - Off Delay Time

85

105

ns

t

f

Turn - Off Fall Time

42

68

ns

Q

g

Total Gate Charge

V

DS = 15 V, I D = 13 A,

35

50

nC

Q

gs

Gate-Source Charge

V

GS = 5 V

9

nC

Q

gd

Gate-Drain Charge

16

nC

DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS

I

S

Maximum Continuous Drain-Source Diode Forward Current

2.1

A

V

SD

Drain-Source Diode Forward Voltage

V

GS = 0 V, IS = 2.1 A

(Note 2)

0.71

1.2

V

Notes:

1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is

guaranteed by design while RθCA is determined by the user's board design.

Scale 1 : 1 on letter size paper

2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.

FDS6670A Rev.D1

c. 125

OC/W on a 0.006 in2 pad

of 2oz copper.

b. 105

OC/W on a 0.04 in2

pad of 2oz copper.

a. 50

OC/W on a 1 in2 pad

of 2oz copper.

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