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SS8550CBU Folha de dados(PDF) 1 Page - Fairchild Semiconductor

Nome de Peças SS8550CBU
Descrição Electrónicos  SS8550 2W Output Amplifier of Portable Radios in Class B Push-pull Operation
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Fabricante Electrônico  FAIRCHILD [Fairchild Semiconductor]
Página de início  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

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© 2007 Fairchild Semiconductor Corporation
www.fairchildsemi.com
SS8550 Rev. 1.0.0
1
March 2008
SS8550
2W Output Amplifier of Portable Radios in Class B Push-pull Operation
Features
• Complimentary to SS8050
• Collector Current: IC=1.5A
• Collector Power Dissipation: PC=1W (TC=25×C)
Absolute Maximum Ratings T
a=25×C unless otherwise noted
Electrical Characteristics T
a=25×C unless otherwise noted
hFEClassification
Symbol
Parameter
Ratings
Units
VCBO
Collector-Base Voltage
-40
V
VCEO
Collector-Emitter Voltage
-25
V
VEBO
Emitter-Base Voltage
-6
V
IC
Collector Current
-1.5
A
PC
Collector Power Dissipation
1
W
TJ
Junction Temperature
150
°C
TSTG
Storage Temperature
-65 ~ 150
°C
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Units
BVCBO
Collector-Base Breakdown Voltage
IC= -100μA, IE=0
-40
V
BVCEO
Collector-Emitter Breakdown Voltage
IC= -2mA, IB=0
-25
V
BVEBO
Emitter-Base Breakdown Voltage
IE= -100μA, IC=0
-6
V
ICBO
Collector Cut-off Current
VCB= -35V, IE=0
-100
nA
IEBO
Emitter Cut-off Current
VEB= -6V, IC=0
-100
nA
hFE1
hFE2
hFE3
DC Current Gain
VCE= -1V, IC= -5mA
VCE= -1V, IC= -100mA
VCE= -1V, IC= -800mA
45
85
40
170
160
80
300
VCE (sat)
Collector-Emitter Saturation Voltage
IC= -800mA, IB= -80mA
-0.28
-0.5
V
VBE (sat)
Base-Emitter Saturation Voltage
IC= -800mA, IB= -80mA
-0.98
-1.2
V
VBE (on)
Base-Emitter on Voltage
VCE= -1V, IC= -10mA
-0.66
-1.0
V
Cob
Output Capacitance
VCB= -10V, IE=0
f=1MHz
15
pF
fT
Current Gain Bandwidth Product
VCE= -10V, IC= -50mA
100
200
MHz
Classification
B
C
D
hFE2
85 ~ 160
120 ~ 200
160 ~ 300
1. Emitter 2. Base 3. Collector
TO-92
1


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