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SS8550CBU Folha de dados(PDF) 1 Page - Fairchild Semiconductor |
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SS8550CBU Folha de dados(HTML) 1 Page - Fairchild Semiconductor |
1 / 3 page © 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com SS8550 Rev. 1.0.0 1 March 2008 SS8550 2W Output Amplifier of Portable Radios in Class B Push-pull Operation Features • Complimentary to SS8050 • Collector Current: IC=1.5A • Collector Power Dissipation: PC=1W (TC=25×C) Absolute Maximum Ratings T a=25×C unless otherwise noted Electrical Characteristics T a=25×C unless otherwise noted hFEClassification Symbol Parameter Ratings Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -6 V IC Collector Current -1.5 A PC Collector Power Dissipation 1 W TJ Junction Temperature 150 °C TSTG Storage Temperature -65 ~ 150 °C Symbol Parameter Test Condition Min. Typ. Max. Units BVCBO Collector-Base Breakdown Voltage IC= -100μA, IE=0 -40 V BVCEO Collector-Emitter Breakdown Voltage IC= -2mA, IB=0 -25 V BVEBO Emitter-Base Breakdown Voltage IE= -100μA, IC=0 -6 V ICBO Collector Cut-off Current VCB= -35V, IE=0 -100 nA IEBO Emitter Cut-off Current VEB= -6V, IC=0 -100 nA hFE1 hFE2 hFE3 DC Current Gain VCE= -1V, IC= -5mA VCE= -1V, IC= -100mA VCE= -1V, IC= -800mA 45 85 40 170 160 80 300 VCE (sat) Collector-Emitter Saturation Voltage IC= -800mA, IB= -80mA -0.28 -0.5 V VBE (sat) Base-Emitter Saturation Voltage IC= -800mA, IB= -80mA -0.98 -1.2 V VBE (on) Base-Emitter on Voltage VCE= -1V, IC= -10mA -0.66 -1.0 V Cob Output Capacitance VCB= -10V, IE=0 f=1MHz 15 pF fT Current Gain Bandwidth Product VCE= -10V, IC= -50mA 100 200 MHz Classification B C D hFE2 85 ~ 160 120 ~ 200 160 ~ 300 1. Emitter 2. Base 3. Collector TO-92 1 |
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