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FMG1G50US60 Folha de dados(PDF) 3 Page - Fairchild Semiconductor |
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FMG1G50US60 Folha de dados(HTML) 3 Page - Fairchild Semiconductor |
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3 / 9 page  ©2002 Fairchild Semiconductor Corporation FMG1G50US60L Rev. A Electrical Characteristics of DIODE T C = 25°C unless otherwise noted Thermal Characteristics Symbol Parameter Test Conditions Min. Typ. Max. Units VFM Diode Forward Voltage IF = 50A TC = 25°C -- 1.9 2.8 V TC = 100°C -- 1.8 -- trr Diode Reverse Recovery Time IF = 50A di / dt = 100 A/us TC = 25°C -- 90 130 ns TC = 100°C -- 130 -- Irr Diode Peak Reverse Recovery Current TC = 25°C -- 5 6.5 A TC = 100°C -- 7 -- Qrr Diode Reverse Recovery Charge TC = 25°C -- 225 422 nC TC = 100°C -- 455 -- Symbol Parameter Typ. Max. Units RθJC Junction-to-Case (IGBT Part, per 1/2 Module) -- 0.5 °C/W RθJC Junction-to-Case (DIODE Part, per 1/2 Module) -- 1.0 °C/W RθCS Case-to-Sink (Conductive grease applied) 0.05 -- °C/W Weight Weight of Module -- 190 g |
Nº de peça semelhante - FMG1G50US60 |
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Descrição semelhante - FMG1G50US60 |
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