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FM25CL64B Folha de dados(PDF) 1 Page - Cypress Semiconductor |
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FM25CL64B Folha de dados(HTML) 1 Page - Cypress Semiconductor |
1 / 17 page This product conforms to specifications per the terms of the Ramtron standard warranty. The product has completed Ramtron’s internal qualification testing and has reached production status. Cypress Semiconductor Corporation • 198 Champion Court • San Jose, CA 95134-1709 • 408-943-2600 Document Number: 001-84477 Rev. *B Revised May 29, 2013 FM25CL64B 64Kb Serial 3V F-RAM Memory Features 64K bit Ferroelectric Nonvolatile RAM Organized as 8,192 x 8 bits High Endurance 100 Trillion (10 14) Read/Writes 38 Year Data Retention (@ +75ºC) NoDelay™ Writes Advanced High-Reliability Ferroelectric Process Very Fast Serial Peripheral Interface - SPI Up to 20 MHz Frequency Direct Hardware Replacement for EEPROM SPI Mode 0 & 3 (CPOL, CPHA=0,0 & 1,1) Sophisticated Write Protection Scheme Hardware Protection Software Protection Low Power Consumption Low Voltage Operation 2.7-3.65V 200 A Active Current (1 MHz) 3 A (typ.) Standby Current Industry Standard Configuration Industrial Temperature -40 C to +85 C 8-pin “Green”/RoHS SOIC and TDFN Packages Description The FM25CL64B is a 64-kilobit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is nonvolatile and performs reads and writes like a RAM. It provides reliable data retention for 38 years while eliminating the complexities, overhead, and system level reliability problems caused by EEPROM and other nonvolatile memories. The FM25CL64B performs write operations at bus speed. No write delays are incurred. Data is written to the memory array immediately after each byte has been successfully transferred to the device. The next bus cycle may commence immediately without the need for data polling. In addition, the product offers substantial write endurance compared with other nonvolatile memories. The FM25CL64B is capable of supporting 10 14 read/write cycles, or 100 million times more write cycles than EEPROM. These capabilities make the FM25CL64B ideal for nonvolatile memory applications requiring frequent or rapid writes. Examples range from data collection, where the number of write cycles may be critical, to demanding industrial controls where the long write time of EEPROM can cause data loss. The FM25CL64B provides substantial benefits to users of serial EEPROM as a hardware drop-in replacement. The FM25CL64B uses the high-speed SPI bus, which enhances the high-speed write capability of F-RAM technology. Device specifications are guaranteed over an industrial temperature range of -40°C to +85°C. Pin Configuration Pin Name Function /CS Chip Select /WP Write Protect /HOLD Hold SCK Serial Clock SI Serial Data Input SO Serial Data Output VDD Supply Voltage VSS Ground Ordering Information FM25CL64B-G “Green” 8-pin SOIC FM25CL64B-GTR “Green” 8-pin SOIC, Tape & Reel FM25CL64B-DG “Green”/RoHS 8-pin TDFN FM25CL64B-DGTR “Green”/RoHS 8-pin TDFN, Tape & Reel /CS SO /WP VSS VDD /HOLD SCK SI 8 7 6 5 1 2 3 4 Top View CS SO WP VSS VDD HOLD SCK SI 1 2 3 4 8 7 6 5 |
Nº de peça semelhante - FM25CL64B_13 |
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Descrição semelhante - FM25CL64B_13 |
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