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FM24W256-EGTR Folha de dados(PDF) 1 Page - Cypress Semiconductor

Nome de Peças FM24W256-EGTR
Descrição Electrónicos  256Kb Wide Voltage Serial F-RAM
Download  14 Pages
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Fabricante Electrônico  CYPRESS [Cypress Semiconductor]
Página de início  http://www.cypress.com
Logo CYPRESS - Cypress Semiconductor

FM24W256-EGTR Folha de dados(HTML) 1 Page - Cypress Semiconductor

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Pre-Production
This is a product in the pre-production phase of development. Device characterization is complete and Ramtron does not expect to
change the specifications. Ramtron will issue a Product Change Notice if any specification changes are made.
Cypress Semiconductor Corporation
198 Champion Court
San Jose, CA 95134-1709
408-943-2600
Document Number: 001-84464 Rev. *A
Revised March 07, 2013
FM24W256
256Kb Wide Voltage Serial F-RAM
Features
256K bit Ferroelectric Nonvolatile RAM
Organized as 32,768 x 8 bits
High Endurance 100 Trillion (10
14) Read/Writes
38 year Data Retention (@ +75ºC)
NoDelay™ Writes
Advanced High-Reliability Ferroelectric Process
Fast Two-wire Serial Interface
Up to 1 MHz maximum bus frequency
Direct hardware replacement for EEPROM
Supports legacy timing for 100 kHz & 400 kHz
Low Power Operation
Wide Voltage Operation 2.7V-5.5V
100 A Active Current (100 kHz)
15 A Standby Current (typ.)
Industry Standard Configuration
Industrial Temperature -40 C to +85 C
8-pin “Green”/RoHS SOIC Package
Description
The FM24W256 is a 256-kilobit nonvolatile memory
employing an advanced ferroelectric process. A
ferroelectric random access memory or F-RAM is
nonvolatile and performs reads and writes like a
RAM. It provides reliable data retention for 38 years
while eliminating the complexities, overhead, and
system
level
reliability
problems
caused
by
EEPROM and other nonvolatile memories.
The FM24W256 performs write operations at bus
speed. No write delays are incurred. Data is written to
the memory array immediately after it has been
successfully transferred to the device. The next bus
cycle may commence immediately without the need
for data polling. In addition, the product offers
substantial write endurance compared with other
nonvolatile memories. The FM24W256 is capable of
supporting 10
14
read/write cycles, or 100 million
times more write cycles than EEPROM.
These capabilities make the FM24W256 ideal for
nonvolatile memory applications requiring frequent
or rapid writes. Examples range from data collection
where the number of write cycles may be critical, to
demanding industrial controls where the long write
time
of EEPROM
can cause
data
loss.
The
combination of features allows more frequent data
writing with less overhead for the system.
The FM24W256 provides substantial benefits to
users of serial EEPROM, yet these benefits are
available in a hardware drop-in replacement. The
FM24W256 is available in industry standard 8-pin
SOIC package using a familiar two-wire protocol. It
is guaranteed over an industrial temperature range of
-40°C to +85°C.
Pin Configuration
A0
A1
A2
VSS
VDD
WP
SCL
SDA
1
2
3
4
8
7
6
5
Pin Names
Function
A0-A2
Device Select Address
SDA
Serial Data/Address
SCL
Serial Clock
WP
Write Protect
VSS
Ground
VDD
Supply Voltage
Ordering Information
FM24W256-G
8-pin “Green”/RoHS SOIC
FM24W256-GTR
8-pin “Green”/RoHS SOIC, Tape
& Reel
FM24W256-EG*
8-pin “Green”/RoHS EIAJ SOIC
FM24W256-EGTR*
8-pin “Green”/RoHS EIAJ SOIC,
Tape & Reel
* Not Recommended for New Designs


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