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FM25CL64B-G Folha de dados(PDF) 8 Page - Cypress Semiconductor

Nome de Peças FM25CL64B-G
Descrição Electrónicos  64Kb Serial 3V F-RAM Memory
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Fabricante Electrônico  CYPRESS [Cypress Semiconductor]
Página de início  http://www.cypress.com
Logo CYPRESS - Cypress Semiconductor

FM25CL64B-G Folha de dados(HTML) 8 Page - Cypress Semiconductor

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FM25CL64B - 64Kb 3V SPI F-RAM
Document Number: 001-84477 Rev. *B
Page 8 of 17
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op-code
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Data
Figure 9. Memory Write (WREN not shown)
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op-code
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Figure 10. Memory Read
Endurance
The FM25CL64B devices are capable of being
accessed at least 10
14 times, reads or writes. An F-
RAM memory operates with a read and restore
mechanism. Therefore, an endurance cycle is applied
on a row basis for each access (read or write) to the
memory array. The F-RAM architecture is based on
an array of rows and columns. Rows are defined by
A12-A3 and column addresses by A2-A0. See Block
Diagram (pg 2) which shows the array as 1K rows of
64-bits each. The entire row is internally accessed
once whether a single byte or all eight bytes are read
or written. Each byte in the row is counted only once
in an endurance calculation. The table below shows
endurance calculations for 64-byte repeating loop,
which includes an op-code, a starting address, and a
sequential 64-byte data stream. This causes each byte
to experience one endurance cycle through the loop.
F-RAM read and write endurance is virtually
unlimited even at 20MHz clock rate.
Table 5. Time to Reach Endurance Limit for Repeating 64-byte Loop
SCK Freq
(MHz)
Endurance
Cycles/sec.
Endurance
Cycles/year
Years to Reach
Limit
20
37,310
1.18 x 10
12
85.1
10
18,660
5.88 x 10
11
170.2
5
9,330
2.94 x 10
11
340.3


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