FM28V020-SG datasheet(7/16 Pages) CYPRESS

Nome de Peças	FM28V020-SG

Descrição Electrónicos	256Kbit Bytewide F-RAM Memory

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Fabricante Electrônico	CYPRESS [Cypress Semiconductor]

Página de início	http://www.cypress.com

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FM28V020 - 32Kx8 F-RAM

Document Number: 001-86204 Rev. *A

Page 7 of 16

Electrical Specifications

Absolute Maximum Ratings

Symbol

Description

Ratings

VDD

Power Supply Voltage with respect to VSS

-1.0V to +4.5V

VIN

Voltage on any signal pin with respect to VSS

-1.0V to +4.5V and

VIN < VDD+1V

TSTG

Storage Temperature

-55 C to +125 C

TLEAD

Lead Temperature (Soldering, 10 seconds)

260 C

VESD

Electrostatic Discharge Voltage

- Human Body Model (AEC-Q100-002 Rev. E)

- Charged Device Model (AEC-Q100-011 Rev. B)

- Machine Model (AEC-Q100-003 Rev. E)

2kV

1.25kV

200V

Package Moisture Sensitivity Level

MSL-2 (SOIC)

MSL-3 (TSOP)

Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating

only, and the functional operation of the device at these or any other conditions above those listed in the operational section of this

specification is not implied. Exposure to absolute maximum ratings conditions for extended periods may affect device reliability.

DC Operating Conditions (TA = -40 C to +85 C, VDD = 2.0V to 3.6V unless otherwise specified)

Symbol

Parameter

Min

Typ

Max

Units

Notes

VDD

Power Supply

2.0

3.3

3.6

V

IDD

VDD Supply Current

5

8

mA

1

ISB

Standby Current – CMOS

90

150

A

2

ILI

Input Leakage Current

1

A

3

ILO

Output Leakage Current

1

A

3

VIH

Input High Voltage

0.7 VDD

VDD + 0.3

V

VIL

Input Low Voltage

-0.3

0.3 VDD

V

VOH1

Output High Voltage (IOH = -1 mA, VDD=2.7V)

2.4

V

VOH2

Output High Voltage (IOH = -100 A)

VDD-0.2

V

VOL1

Output Low Voltage (IOL = 1 mA, VDD=2.7V)

0.4

V

VOL2

Output Low Voltage (IOL = 150 A)

0.2

V

Notes

1.

VDD = 3.6V, /CE cycling at minimum cycle time. All inputs at CMOS levels (0.2V or VDD-0.2V), all DQ pins unloaded.

2.

VDD = 3.6V, /CE at VDD, All other pins at CMOS levels (0.2V or VDD-0.2V).

3.

VIN, VOUT between VDD and VSS.

Nº de peça semelhante - FM28V020-SG

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
Ramtron International C...	FM28V020-SG	165Kb / 14P	256Kbit Bytewide F-RAM Memory
	FM28V020-SG	251Kb / 14P	256Kbit Bytewide F-RAM Memory
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Descrição semelhante - FM28V020-SG

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
Ramtron International C...	FM28V020	165Kb / 14P	256Kbit Bytewide F-RAM Memory
	FM28V020	251Kb / 14P	256Kbit Bytewide F-RAM Memory
	FM28V100	147Kb / 13P	1Mbit Bytewide F-RAM Memory
Cypress Semiconductor	FM28V100	423Kb / 13P	1Mbit Bytewide F-RAM Memory
Cypress Semiconductor	FM28V100	402Kb / 14P	1Mbit Bytewide F-RAM Memory
Ramtron International C...	FM28V100	321Kb / 13P	1Mbit Bytewide F-RAM Memory
Cypress Semiconductor	FM1808B	336Kb / 12P	256Kb Bytewide 5V F-RAM Memory
Ramtron International C...	FM1608B	94Kb / 11P	64Kb Bytewide 5V F-RAM Memory
Cypress Semiconductor	FM1608B	342Kb / 14P	64Kb Bytewide 5V F-RAM Memory
Ramtron International C...	FM1808B	94Kb / 11P	256Kb Bytewide 5V F-RAM Memory

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FM28V020-SG Folha de dados(PDF) 7 Page - Cypress Semiconductor

FM28V020-SG Folha de dados(HTML) 7 Page - Cypress Semiconductor

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