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FQAF34N25 Folha de dados(PDF) 1 Page - Fairchild Semiconductor |
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FQAF34N25 Folha de dados(HTML) 1 Page - Fairchild Semiconductor |
1 / 8 page ©2001 Fairchild Semiconductor Corporation October 2001 Rev. A, October 2001 FQAF34N25 250V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters and switch mode power supplies. Features • 21.7A, 250V, RDS(on) = 0.085Ω @VGS = 10 V • Low gate charge ( typical 60 nC) • Low Crss ( typical 60 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability Absolute Maximum Ratings T C = 25°C unless otherwise noted Thermal Characteristics Symbol Parameter FQAF34N25 Units VDSS Drain-Source Voltage 250 V ID Drain Current - Continuous (TC = 25°C) 21.7 A - Continuous (TC = 100°C) 13.7 A IDM Drain Current - Pulsed (Note 1) 86.8 A VGSS Gate-Source Voltage ± 30 V EAS Single Pulsed Avalanche Energy (Note 2) 700 mJ IAR Avalanche Current (Note 1) 21.7 A EAR Repetitive Avalanche Energy (Note 1) 10 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 4.8 V/ns PD Power Dissipation (TC = 25°C) 100 W - Derate above 25°C 0.8 W/°C TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C TL Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds 300 °C Symbol Parameter Typ Max Units RθJC Thermal Resistance, Junction-to-Case -- 1.25 °C/W RθJA Thermal Resistance, Junction-to-Ambient -- 40 °C/W TO-3PF FQAF Series GS D ● ● ● ● ● ● ● ● ● ● ● ● ▲ ▲ ▲ ▲ ! ! ! ! ! ! ! ! ! ! ! ! ◀ ◀ ◀ ◀ ● ● ● ● ● ● ● ● ● ● ● ● ▲ ▲ ▲ ▲ ! ! ! ! ! ! ! ! ! ! ! ! ◀ ◀ ◀ ◀ S D G |
Nº de peça semelhante - FQAF34N25 |
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Descrição semelhante - FQAF34N25 |
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