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SI1902DL-T1-GE3 Folha de dados(PDF) 1 Page - Vishay Siliconix |
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SI1902DL-T1-GE3 Folha de dados(HTML) 1 Page - Vishay Siliconix |
1 / 9 page Vishay Siliconix Si1902DL Document Number: 71080 S11-2043-Rev. J, 17-Oct-11 www.vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Dual N-Channel 20 V (D-S) MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET ® Power MOSFETs: 2.5 V Rated • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC Notes: a. Surface Mounted on 1" x 1" FR4 board. PRODUCT SUMMARY VDS (V) RDS(on) ()ID (A) 20 0.385 at VGS = 4.5 V 0.70 0.630 at VGS = 2.5 V 0.54 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol 5 s Steady State Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS ±12 Continuous Drain Current (TJ = 150 °C) a TA = 25 °C ID 0.70 0.66 A TA = 85 °C 0.50 0.48 Pulsed Drain Current IDM 1 Continuous Source Current (Diode Conduction)a IS 0.25 0.23 Maximum Power Dissipationa TA = 25 °C PD 0.30 0.27 W TA = 85 °C 0.16 0.14 Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambienta t 5 s RthJA 360 415 °C/W Steady State 400 460 Maximum Junction-to-Foot (Drain) Steady State RthJF 300 350 M ar kin g C ode PA X X Lot T SOT-363 SC-70 (6-LEADS) 6 4 1 2 3 5 Top View S1 G1 D2 D1 G2 S2 Part # Code Marking Code PA Lot Traceability and Date Code Ordering Information: Si1902DL-T1-E3 (Lead (Pb)-free with Tape and Reel) Si1902DL-T1-GE3 (Lead (Pb)-free and Halogen-free) |
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