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SI4435DDY Folha de dados(PDF) 2 Page - Vishay Siliconix |
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SI4435DDY Folha de dados(HTML) 2 Page - Vishay Siliconix |
2 / 10 page www.vishay.com 2 Document Number: 68841 S09-0863-Rev. C, 18-May-09 Vishay Siliconix Si4435DDY New Product Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = - 250 µA - 30 V VDS Temperature Coefficient ΔV DS/TJ ID = - 250 µA - 31 mV/°C VGS(th) Temperature Coefficient ΔV GS(th)/TJ 4.5 Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = - 250 µA - 1.0 - 3.0 V Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = - 30 V, VGS = 0 V - 1 µA VDS = - 30 V, VGS = 0 V, TJ = 55 °C - 5 On-State Drain Currenta ID(on) VDS ≥ - 10 V, VGS = - 10 V - 30 A Drain-Source On-State Resistancea RDS(on) VGS = - 10 V, ID = - 9.1 A 0.0195 0.024 Ω VGS = - 4.5 V, ID = - 6.9 A 0.028 0.035 Forward Transconductancea gfs VDS = - 10 V, ID = - 9.1 A 23 S Dynamicb Input Capacitance Ciss VDS = - 15 V, VGS = 0 V, f = 1 MHz 1350 pF Output Capacitance Coss 215 Reverse Transfer Capacitance Crss 185 Total Gate Charge Qg VDS = - 15 V, VGS = - 10 V, ID = - 9.1 A 32 50 nC VDS = - 15 V, VGS = - 4.5 V, ID = - 9.1 A 15 25 Gate-Source Charge Qgs 4 Gate-Drain Charge Qgd 7.5 Gate Resistance Rg f = 1 MHz 5.8 Ω Turn-On Delay Time td(on) VDD = - 15 V, RL = 15 Ω ID ≅ - 1 A, VGEN = - 10 V, Rg = 1 Ω 10 15 ns Rise Time tr 815 Turn-Off DelayTime td(off) 45 70 Fall Time tf 12 25 Turn-On Delay Time td(on) VDD = - 15 V, RL = 15 Ω ID ≅ - 1 A, VGEN = - 4.5 V, Rg = 1 Ω 42 70 Rise Time tr 35 60 Turn-Off DelayTime td(off) 40 70 Fall Time tf 16 30 Drain-Source Body Diode Characteristics Continous Source-Drain Diode Current IS TC = 25 °C - 4.1 A Pulse Diode Forward Current ISM - 50 Body Diode Voltage VSD IS = - 2 A, VGS = 0 V - 0.75 - 1.2 V Body Diode Reverse Recovery Time trr IF = - 2 A, dI/dt = 100 A/µs, TJ = 25 °C 34 60 ns Body Diode Reverse Recovery Charge Qrr 22 40 nC Reverse Recovery Fall Time ta 11 ns Reverse Recovery Rise Time tb 23 |
Nº de peça semelhante - SI4435DDY |
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Descrição semelhante - SI4435DDY |
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