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FQD30N06L Folha de dados(PDF) 1 Page - Fairchild Semiconductor

Nome de Peças FQD30N06L
Descrição Electrónicos  60V LOGIC N-Channel MOSFET
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Fabricante Electrônico  FAIRCHILD [Fairchild Semiconductor]
Página de início  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FQD30N06L Folha de dados(HTML) 1 Page - Fairchild Semiconductor

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May 2001
QFETTM
©2001 Fairchild Semiconductor Corporation
Rev. A1. May 2001
FQD30N06L / FQU30N06L
60V LOGIC N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for low voltage applications such as automotive, DC/
DC converters, and high efficiency switching for power
management in portable and battery operated products.
Features
• 24A, 60V, RDS(on) = 0.039Ω @ VGS = 10V
• Low gate charge ( typical 15 nC)
• Low Crss ( typical 50 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 150oC maximum junction temperature rating
• Low level gate drive requirements allowing direct
operation form logic drivers
Absolute Maximum Ratings T
C = 25°C unless otherwise noted
Thermal Characteristics
Symbol
Parameter
FQD30N06L / FQR30N06L
Units
VDSS
Drain-Source Voltage
60
V
ID
Drain Current
- Continuous (TC = 25°C)
24
A
- Continuous (TC = 100°C)
15
A
IDM
Drain Current
- Pulsed
(Note 1)
96
A
VGSS
Gate-Source Voltage
± 20
V
EAS
Single Pulsed Avalanche Energy
(Note 2)
400
mJ
IAR
Avalanche Current
(Note 1)
24
A
EAR
Repetitive Avalanche Energy
(Note 1)
4.4
mJ
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
7.0
V/ns
PD
Power Dissipation (TA = 25°C) *
2.5
W
Power Dissipation (TC = 25°C)
44
W
- Derate above 25°C
0.35
W/°C
TJ, TSTG
Operating and Storage Temperature Range
-55 to +150
°C
TL
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
300
°C
Symbol
Parameter
Typ
Max
Units
RθJC
Thermal Resistance, Junction-to-Case
--
2.85
°C/W
RθJA
Thermal Resistance, Junction-to-Ambient *
--
50
°C/W
RθJA
Thermal Resistance, Junction-to-Ambient
--
110
°C/W
* When mounted on the minimum pad size recommended (PCB Mount)
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I-PAK
FQU Series
D-PAK
FQD Series
G
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