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FQPF3N25 Folha de dados(PDF) 1 Page - Fairchild Semiconductor |
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FQPF3N25 Folha de dados(HTML) 1 Page - Fairchild Semiconductor |
1 / 8 page ©2000 Fairchild Semiconductor International November 2000 Rev. A, November 2000 QFET QFET QFET QFETTM FQPF3N25 250V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supply. Features • 2.3A, 250V, RDS(on) = 2.2Ω @VGS = 10 V • Low gate charge ( typical 4.0 nC) • Low Crss ( typical 4.7 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability Absolute Maximum Ratings T C = 25°C unless otherwise noted Thermal Characteristics Symbol Parameter FQPF3N25 Units VDSS Drain-Source Voltage 250 V ID Drain Current - Continuous (TC = 25°C) 2.3 A - Continuous (TC = 100°C) 1.45 A IDM Drain Current - Pulsed (Note 1) 9.2 A VGSS Gate-Source Voltage ± 30 V EAS Single Pulsed Avalanche Energy (Note 2) 40 mJ IAR Avalanche Current (Note 1) 2.3 A EAR Repetitive Avalanche Energy (Note 1) 2.7 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 5.5 V/ns PD Power Dissipation (TC = 25°C) 27 W - Derate above 25°C 0.22 W/°C TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C TL Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds 300 °C Symbol Parameter Typ Max Units RθJC Thermal Resistance, Junction-to-Case -- 4.63 °C/W RθJA Thermal Resistance, Junction-to-Ambient -- 62.5 °C/W ! " ! ! ! " " " ! " ! ! ! " " " S D G TO-220F FQPF Series G S D |
Nº de peça semelhante - FQPF3N25 |
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Descrição semelhante - FQPF3N25 |
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