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FQPF3N25 Folha de dados(PDF) 1 Page - Fairchild Semiconductor

Nome de Peças FQPF3N25
Descrição Electrónicos  250V N-Channel MOSFET
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Fabricante Electrônico  FAIRCHILD [Fairchild Semiconductor]
Página de início  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FQPF3N25 Folha de dados(HTML) 1 Page - Fairchild Semiconductor

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©2000 Fairchild Semiconductor International
November 2000
Rev. A, November 2000
QFET
QFET
QFET
QFETTM
FQPF3N25
250V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switching DC/DC converters,
switch mode power supply.
Features
• 2.3A, 250V, RDS(on) = 2.2Ω @VGS = 10 V
• Low gate charge ( typical 4.0 nC)
• Low Crss ( typical 4.7 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
Absolute Maximum Ratings T
C = 25°C unless otherwise noted
Thermal Characteristics
Symbol
Parameter
FQPF3N25
Units
VDSS
Drain-Source Voltage
250
V
ID
Drain Current
- Continuous (TC = 25°C)
2.3
A
- Continuous (TC = 100°C)
1.45
A
IDM
Drain Current
- Pulsed
(Note 1)
9.2
A
VGSS
Gate-Source Voltage
± 30
V
EAS
Single Pulsed Avalanche Energy
(Note 2)
40
mJ
IAR
Avalanche Current
(Note 1)
2.3
A
EAR
Repetitive Avalanche Energy
(Note 1)
2.7
mJ
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
5.5
V/ns
PD
Power Dissipation (TC = 25°C)
27
W
- Derate above 25°C
0.22
W/°C
TJ, TSTG
Operating and Storage Temperature Range
-55 to +150
°C
TL
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
300
°C
Symbol
Parameter
Typ
Max
Units
RθJC
Thermal Resistance, Junction-to-Case
--
4.63
°C/W
RθJA
Thermal Resistance, Junction-to-Ambient
--
62.5
°C/W
! "
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"
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"
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!
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"
"
S
D
G
TO-220F
FQPF Series
G
S
D


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