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STB18NM60N Folha de dados(PDF) 4 Page - STMicroelectronics

Nome de Peças STB18NM60N
Descrição Electrónicos  N-channel 600 V, 0.26typ., 13 A MDmesh??II Power MOSFET in D2PAK, TO-220FP, TO-220 and TO-247
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Fabricante Electrônico  STMICROELECTRONICS [STMicroelectronics]
Página de início  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STB18NM60N Folha de dados(HTML) 4 Page - STMicroelectronics

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Electrical characteristics
STB18NM60N, STF18NM60N, STP18NM60N, STW18NM60N
4/21
Doc ID 15868 Rev 4
2
Electrical characteristics
(TCASE=25 °C unless otherwise specified)
Table 4.
On/off states
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source breakdown
voltage
ID = 1 mA, VGS= 0
600
V
IDSS
Zero gate voltage drain
current (VGS = 0)
VDS = 600 V
VDS = 600 V, TJ=125 °C
1
10
µA
µA
IGSS
Gate body leakage current
(VDS = 0)
VGS = ±25 V
±100
nA
VGS(th)
Gate threshold voltage
VDS= VGS, ID = 250 µA
2
3
4
V
RDS(on)
Static drain-source on-
resistance
VGS= 10 V, ID=6.5 A
0.260 0.285
Ω
Table 5.
Dynamic
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 50 V, f =1 MHz,
VGS = 0
-
1000
60
3
-
pF
pF
pF
Coss eq.
(1)
1.
Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDS.
Output equivalent
capacitance
VDS = 0, to 480 V, VGS=0
-
225
-
pF
Rg
Intrinsic resistance
f=1 MHz open drain
-
3.5
-
Ω
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD = 480 V, ID = 13 A
VGS = 10 V
(see Figure 19)
-
35
6
20
-
nC
nC
nC
Table 6.
Switching times
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
VDD = 300 V, ID = 6.5 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 18)
-
12
15
55
25
-
ns
ns
ns
ns


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