SI4123-D-GM datasheet(5/36 Pages) SILABS

Nome de Peças	SI4123-D-GM

Descrição Electrónicos	DUAL-BAND RF SYNTHESIZER WITH INTEGRATED VCOS FOR WIRELESS COMMUNICATIONS

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Si4133

Rev. 1.61

5

Table 3. DC Characteristics

(V

DD = 2.7 to 3.6 V, TA = –40 to 85 °C)

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

Total Supply Current1

RF1 and IF operating

—

18

27

mA

RF1 Mode Supply Current1

—10

16

mA

RF2 Mode Supply Current1

—9

16

mA

IF Mode Supply Current1

—8

13

mA

Standby Current

PWDN = 0

—

1

—

µA

High Level Input Voltage2

VIH

0.7 VDD

——

V

Low Level Input Voltage2

VIL

—

0.3 VDD

V

High Level Input Current2

I

IH

V

IH = 3.6 V,

V

DD = 3.6 V

–10

—

10

µA

Low Level Input Current2

IIL

VIL = 0 V,

VDD= 3.6 V

–10

—

10

µA

High Level Output Voltage3

VOH

IOH = –500 µA

VDD–0.4

—

V

Low Level Output Voltage3

V

OL

I

OH = 500 µA

—

0.4

V

Notes:

1. RF1 = 1.6 GHz, RF2 = 1.1 GHz, IFOUT = 550 MHz, LPWR = 0.

2. For signals SCLK, SDATA, SEN, and PWDN.

3. For signal AUXOUT.

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