FSB660 / FSB660A

PNP Low Saturation Transistor

These devices are designed with high current gain and low saturation voltage with collector currents up to 2A

continuous.

Absolute Maximum Ratings*

°C

-55 to +150

Operating and Storage Junction Temperature Range

A

2

Collector Current - Continuous

V

5

Emitter-Base Voltage

V

60

Collector-Base Voltage

V

60

Collector-Emitter Voltage

Units

FSB660/FSB660A

Parameter

Symbol

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1) These ratings are based on a maximum junction temperature of 150°C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics

°C/W

250

Thermal Resistance, Junction to Ambient

mW

500

Total Device Dissipation

FSB660/FSB660A

Units

Max

Characteristic

Symbol

SuperSOT

© 2000 Fairchild Semiconductor International

FSB660/FSB660A Rev. B

C

E

B