FQD10N20CTM datasheet(4/9 Pages) FAIRCHILD

Nome de Peças	FQD10N20CTM

Descrição Electrónicos	N-Channel QFET MOSFET 200 V, 7.8 A, 360 mOhm

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Fabricante Electrônico	FAIRCHILD [Fairchild Semiconductor]

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10

0

10

1

10

2

10

-1

10

0

10

1

10

2

10 ms

100 µs

DC

1 ms

Operation in This Area

is Limited by R

DS(on)

※

Notes :

1. T

C = 25

oC

2. T

J = 150

oC

3. Single Pulse

V

DS, Drain-Source Voltage [V]

10

-5

10

-4

10

-3

10

-2

10

-1

10

0

10

1

10

-2

10

-1

10

0

※

No te s :

1 . Z

θ

JC (t ) = 2 . 5

℃

/W M a x .

2 . D u ty F a c to r, D = t

1 /t 2

3 . T

JM - T C = P DM * Z θ JC (t )

s ing le pu ls e

D= 0 .5

0.0 2

0.2

0.0 5

0.1

0.0 1

t

1 , S q u a r e W a v e P u ls e D u r a tio n [s e c ]

25

50

75

100

125

150

0

2

4

6

8

10

T

C, Case Temperature [

℃

]

Figure 11. Transient Thermal Response Curve

t1

PDM

t2

-100

-50

0

50

100

150

200

0.0

0.5

1.0

1.5

2.0

2.5

3.0

※

Notes :

1. V

GS = 10 V

2. I

D = 3.9 A

T

J, Junction Temperature [

oC]

-100

-50

0

50

100

150

200

0.8

0.9

1.0

1.1

1.2

※

Notes :

1. V

GS = 0 V

2. I

D = 250

μ

A

T

J, Junction Temperature [

oC]

Typical Characteristics

(Continued)

Figure 9. Maximum Safe Operating Area

Figure 10. Maximum Drain Current

vs Case Temperature

Figure 7. Breakdown Voltage Variation

vs Temperature

Figure 8. On-Resistance Variation

vs Temperature

FQD10N20C / FQU10N20C Rev. C1

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Nº de peça semelhante - FQD10N20CTM

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
Fairchild Semiconductor	FQD10N20C	589Kb / 9P	200V N-Channel MOSFET
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Descrição semelhante - FQD10N20CTM

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
Kersemi Electronic Co.,...	KEMD10N20C	2Mb / 6P	N-Channel MOSFET 200 V, 7.8 A, 360 m
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