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FDD5N60NZ Folha de dados(PDF) 2 Page - Fairchild Semiconductor

Nome de Peças FDD5N60NZ
Descrição Electrónicos  N-Channel UniFET II MOSFET 600 V, 4.0 A, 2 Ohm
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Fabricante Electrônico  FAIRCHILD [Fairchild Semiconductor]
Página de início  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FDD5N60NZ Folha de dados(HTML) 2 Page - Fairchild Semiconductor

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©2011 Fairchild Semiconductor Corporation
FDD5N60NZ Rev. C0
www.fairchildsemi.com
2
Package Marking and Ordering Information
Electrical Characteristics T
C = 25
oC unless otherwise noted
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
FDD5N60NZ
FDD5N60NZ
D-PAK
380mm
16mm
2500
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
BVDSS
Drain to Source Breakdown Voltage
ID = 250A, VGS = 0V, TJ = 25
oC
600
-
-
V
BV
DSS
T
J
Breakdown Voltage Temperature
Coefficient
ID = 250A, Referenced to 25
oC-
0.6
-
V/oC
IDSS
Zero Gate Voltage Drain Current
VDS = 600V, VGS = 0V
-
-
50
A
VDS = 480V, TC = 125
oC-
-
100
IGSS
Gate to Body Leakage Current
VGS = ±25V, VDS = 0V
-
-
±10
A
VGS(th)
Gate Threshold Voltage
VGS = VDS, ID = 250A3.0
-
5.0
V
RDS(on)
Static Drain to Source On Resistance
VGS = 10V, ID = 2.0A
-
1.65
2.00
gFS
Forward Transconductance
VDS = 20V, ID = 2.0A
-
5
-
S
Ciss
Input Capacitance
VDS = 25V, VGS = 0V
f = 1MHz
-
450
600
pF
Coss
Output Capacitance
-
50
65
pF
Crss
Reverse Transfer Capacitance
-
5
7.5
pF
Qg(tot)
Total Gate Charge at 10V
VDS = 400V, ID = 4.0A
VGS = 10V
(Note 4)
-10
13
nC
Qgs
Gate to Source Gate Charge
-
2.5
-
nC
Qgd
Gate to Drain “Miller” Charge
-
4
-
nC
td(on)
Turn-On Delay Time
VDD = 250V, ID = 4.0A
VGS = 10V, RG = 25
(Note 4)
-15
40
ns
tr
Turn-On Rise Time
-
20
50
ns
td(off)
Turn-Off Delay Time
-
35
80
ns
tf
Turn-Off Fall Time
-
20
50
ns
IS
Maximum Continuous Drain to Source Diode Forward Current
-
-
4.0
A
ISM
Maximum Pulsed Drain to Source Diode Forward Current
-
-
16
A
VSD
Drain to Source Diode Forward Voltage
VGS = 0V, ISD = 4.0A
-
-
1.4
V
trr
Reverse Recovery Time
VGS = 0V, ISD = 4.0A
dIF/dt = 100A/s
-
230
-
ns
Qrr
Reverse Recovery Charge
-
0.9
-
C
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 27mH, IAS = 4.0A, VDD = 50V, RG = 25, Starting TJ = 25C
3. ISD 4.0A, di/dt  200A/s, VDD  BVDSS, Starting TJ = 25C
4. Essentially Independent of Operating Temperature Typical Characteristics


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