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BA679S-GS08 Folha de dados(PDF) 2 Page - Vishay Siliconix |
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BA679S-GS08 Folha de dados(HTML) 2 Page - Vishay Siliconix |
2 / 5 page BA679, BA679S www.vishay.com Vishay Semiconductors Rev. 1.8, 16-May-12 2 Document Number: 85529 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) Fig. 1 - Forward Current vs. Forward Voltage Fig. 2 - Differential Forward Resistance vs. Forward Current Fig. 3 - Typ. Cross Modulation Distortion vs. Frequency f2 0 0.4 0.8 1.2 1.6 0.01 0.1 1 10 100 2.0 95 9735 VF - Forward Voltage (V) Tamb = 25 °C Scattering Limit 0.001 0.01 0.1 1 1 10 100 1000 10 000 10 95 9734 IF - Forward Current (mA) f > 20 MHz Tj = 25 °C - 80 - 60 - 40 - 20 0 20 f2 , modulated with 200 kHz, m = 100 % (MHz) 80 60 40 20 0 95 9733 - Circuit with 10 dB Attenuation V0 =40dBmV f1 = 100 MHz unmodulated Π |
Nº de peça semelhante - BA679S-GS08 |
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Descrição semelhante - BA679S-GS08 |
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