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STP4N62K3 Folha de dados(PDF) 5 Page - STMicroelectronics

Nome de Peças STP4N62K3
Descrição Electrónicos  N-channel 620 V, 1.7typ., 3.8 A SuperMESH3 Power MOSFET
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Fabricante Electrônico  STMICROELECTRONICS [STMicroelectronics]
Página de início  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STP4N62K3 Folha de dados(HTML) 5 Page - STMicroelectronics

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STF4N62K3, STFI4N62K3, STI4N62K3, STP4N62K3, STU4N62K3
Electrical characteristics
Doc ID 17548 Rev 4
5/19
The built-in back-to-back Zener diodes have specifically been designed to enhance not only
the device’s ESD capability, but also to make them safely absorb possible voltage transients
that may occasionally be applied from gate to source. In this respect the Zener voltage is
appropriate to achieve an efficient and cost-effective intervention to protect the device’s
integrity. These integrated Zener diodes thus avoid the usage of external components.
Table 6.
Switching times
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off-delay time
Fall time
VDD = 300 V, ID = 1.9 A,
RG = 4.7 Ω, VGS = 10 V
(see
Figure 19)
-
10
9
29
19
-
ns
ns
ns
ns
Table 7.
Source drain diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max. Unit
ISD
ISDM
(1)
1.
Pulse width limited by safe operating area
Source-drain current
Source-drain current (pulsed)
-
3.8
15.2
A
A
VSD
(2)
2.
Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
Forward on voltage
ISD = 3.8 A, VGS = 0
-
1.6
V
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 3.8 A, di/dt = 100 A/µs
VDD = 60 V (see Figure 24)
-
220
1.4
13
ns
µC
A
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 3.8 A, di/dt = 100 A/µs
VDD = 60 V, Tj = 150 °C
(see
Figure 24)
-
270
1.9
14
ns
µC
A
Table 8.
Gate-source Zener diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V(BR)GSO
Gate-source breakdown
voltage (ID = 0)
Igs= ± 1 mA
30
-
V


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