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BF1202 Folha de dados(PDF) 5 Page - NXP Semiconductors |
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BF1202 Folha de dados(HTML) 5 Page - NXP Semiconductors |
5 / 15 page 2010 Sep 16 5 NXP Semiconductors Product specification N-channel dual-gate PoLo MOS-FETs BF1202; BF1202R; BF1202WR handbook, halfpage 02 20 0 4 8 12 16 0.4 0.8 1.2 1.6 VG1-S (V) ID (mA) MCD952 VG2-S = 4 V 2.5 V 3.5 V 3 V 2 V 1.5 V 1 V Fig.5 Transfer characteristics; typical values. VDS =5 V. Tj =25 C. handbook, halfpage 010 24 0 8 16 2 VDS (V) ID (mA) 6 48 MCD953 VG1-S = 1.5 V 1.4 V 1.2 V 1.3 V 1.1 V 1 V 0.9 V Fig.6 Output characteristics; typical values. VG2-S =4 V. Tj =25 C. handbook, halfpage 0 2.5 100 0 20 40 60 80 0.5 1 1.5 2 VG1-S (V) IG1 ( μA) MCD954 VG2-S = 4 V 3.5 V 3 V 2.5 V 2 V 1.5 V 1 V Fig.7 Gate 1 current as a function of gate 1 voltage; typical values. VDS =5 V. Tj =25 C. VDS =5 V. Tj =25 C. handbook, halfpage 0 ID (mA) 420 40 30 10 0 20 812 16 MCD955 yfs (mS) 3.5 V 2.5 V 3 V 2 V VG2-S = 4 V Fig.8 Forward transfer admittance as a function of drain current; typical values. VDS =5 V. Tj =25 C. |
Nº de peça semelhante - BF1202 |
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Descrição semelhante - BF1202 |
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