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CXXXUT2200-SXXXXX Folha de dados(PDF) 2 Page - Cree, Inc

Nome de Peças CXXXUT2200-SXXXXX
Descrição Electrónicos  Small Chip 200 x 200 x 50
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Fabricante Electrônico  CREE [Cree, Inc]
Página de início  http://www.cree.com/
Logo CREE - Cree, Inc

CXXXUT2200-SXXXXX Folha de dados(HTML) 2 Page - Cree, Inc

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Copyright © 2007 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the
Cree logo and G•SiC are registered trademarks, and UltraThin and UT are trademarks of Cree, Inc.
2
CPR3DP Rev. A
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
www.cree.com
Maximum Ratings at T
A = 25°C
Notes &3
CxxxUT2200-Sxxxxx
DC Forward Current
30 mA
Peak Forward Current (1/10 duty cycle @ 1 kHz)
100 mA
LED Junction Temperature
125°C
Reverse Voltage
5 V
Operating Temperature Range
-40°C to +100°C
Storage Temperature Range
-40°C to +100°C
Electrostatic Discharge Threshold (HBM) Note 2
500 V
Typical Electrical/Optical Characteristics at T
A = 25°C, If = 5 mA
Note 3
Part Number
Forward Voltage (V
f, V)
Reverse Current
[I(Vr=5 V), μA]
Full Width Half Max
(
λ
D, nm)
Min.
Typ.
Max.
Max.
Typ.
C460UT2200-Sxxxxx
2.7
2.9
3.1
2
21
C470UT2200-Sxxxxx
2.7
2.9
3.1
2
22
C527UT2200-Sxxxxx
2.7
3.0
3.2
2
35
Mechanical Specifications
CxxxUT2200-Sxxxxx
Description
Dimension
Tolerance
P-N Junction Area (μm)
150 x 150
± 25
Top Area (μm)
200 x 200
± 25
Bottom Area (Substrate) (μm)
150 x 150
± 25
Chip Thickness (μm)
50
± 10
Au Bond Pad Diameter (μm)
90
-5, +15
Au Bond Pad Thickness (μm)
1.2
± 0.5
Back Contact Metal Area (μm)
80 x 80
± 25
Notes:
Maximum ratings are package dependent. The above ratings were determined using a T-1 3/4 package (with Hysol OS4000
epoxy) for characterization. Ratings for other packages may differ. The forward currents (DC and Peak) are not limited by the die
but by the effect of the LED junction temperature on the package. The junction temperature limit of 125°C is a limit of the T-1
3/4 package; junction temperature should be characterized in a specific package to determine limitations. Assembly processing
temperature must not exceed 325°C (< 5 seconds).
Product resistance to electrostatic discharge (ESD) according to the HBM is measured by simulating ESD using a rapid avalanche
energy test (RAET). The RAET procedures are designed to approximate the ESD ratings shown.
All products conform to the listed minimum and maximum specifications for electrical and optical characteristics when assembled
and operated at 5 mA within the maximum ratings shown above. Efficiency decreases at higher currents. Typical values given
are within the range of average values expected by manufacturer in large quantities and are provided for information only. All
measurements were made using lamps in T-1 3/4 packages (with Hysol OS4000 epoxy). Optical characteristics measured in an
integrating sphere using Illuminance E.
Caution: To obtain optimum output efficiency, the amount of epoxy used should be characterized based upon the specific
application.
1.
2.
3.
4.
C460UT2200-S0550
C460UT2200-0201
C460UT2200-0202
C460UT2200-0203
C460UT2200-0204
8.0 mW
5.5 mW
Dominant Wavelength
455 nm
460 nm
465 nm
462.5 nm
457.5 nm
C460UT2200-S0800
C460UT2200-0205
C460UT2200-0206
C460UT2200-0207
C460UT2200-0208
8.0 mW
Dominant Wavelength
455 nm
460 nm
465 nm
462.5 nm
457.5 nm
C470UT2200-S0550
C470UT2200-0201
C470UT2200-0202
C470UT2200-0203
C470UT2200-0204
8.0 mW
5.5 mW
Dominant Wavelength
465 nm
470 nm
472.5 nm
467.5 nm
475 nm
C470UT2200-S0800
C470UT2200-0205
C470UT2200-0206
C470UT2200-0207
C470UT2200-0208
8.0 mW
Dominant Wavelength
465 nm
470 nm
472.5 nm
467.5 nm
475 nm


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