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HUFA75617D3S Folha de dados(PDF) 4 Page - Fairchild Semiconductor

Nome de Peças HUFA75617D3S
Descrição Electrónicos  16A, 100V, 0.090 Ohm, N-Channel, UltraFET Power MOSFETs
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Fabricante Electrônico  FAIRCHILD [Fairchild Semiconductor]
Página de início  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

HUFA75617D3S Folha de dados(HTML) 4 Page - Fairchild Semiconductor

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©2001 Fairchild Semiconductor Corporation
HUFA75617D3 Rev. B
FIGURE 5. FORWARD BIAS SAFE OPERATING AREA
NOTE: Refer to Fairchild Application Notes AN9321 and AN9322.
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING
CAPABILITY
FIGURE 7. TRANSFER CHARACTERISTICS
FIGURE 8. SATURATION CHARACTERISTICS
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
FIGURE 10. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
Typical Performance Curves (Continued)
100
10
200
1
1
VDS, DRAIN TO SOURCE VOLTAGE (V)
TJ = MAX RATED
TC = 25
oC
SINGLE PULSE
100
100
µs
10ms
1ms
LIMITED BY rDS(ON)
AREA MAY BE
OPERATION IN THIS
0.1
10
200
100
0.001
0.01
0.1
10
tAV, TIME IN AVALANCHE (ms)
STARTING TJ = 25
oC
STARTING TJ = 150
oC
1
10
1
tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD)
If R = 0
If R
≠ 0
tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1]
0
15
20
30
234
6
VGS, GATE TO SOURCE VOLTAGE (V)
PULSE DURATION = 80
µs
DUTY CYCLE = 0.5% MAX
VDD = 15V
TJ = 175
oC
TJ = 25
oC
TJ = -55
oC
5
5
25
10
0
15
30
5
20
25
10
01234
VDS, DRAIN TO SOURCE VOLTAGE (V)
VGS = 10V
PULSE DURATION = 80
µs
DUTY CYCLE = 0.5% MAX
TC = 25
oC
VGS = 6V
VGS = 5V
0.5
1.0
1.5
2.0
-80
-40
0
40
80
120
200
TJ, JUNCTION TEMPERATURE (
oC)
VGS = 10V, ID = 16A
PULSE DURATION = 80
µs
DUTY CYCLE = 0.5% MAX
160
2.5
3.0
0.6
0.8
1.0
1.2
-80
-40
0
40
80
120
200
TJ, JUNCTION TEMPERATURE (
oC)
VGS = VDS, ID = 250µA
160
HUFA75617D3


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