BD243BG datasheet(5/6 Pages) ONSEMI

Nome de Peças	BD243BG

Descrição Electrónicos	Complementary Silicon Plastic Power Transistors

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Fabricante Electrônico	ONSEMI [ON Semiconductor]

Página de início	http://www.onsemi.com

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5 / 6 page

BD243B, BD243C (NPN) BD244B, BD244C (PNP)

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5

103

Figure 12. Collector Cut-Off Region

VBE, BASE‐EMITTER VOLTAGE (VOLTS)

102

101

100

10-1

10- 2

10- 3

-0.3 -0.2 -0.1

0

+0.1 +0.2 +0.3

+0.4 +0.5 +0.6

VCE = 30 V

TJ = 150°C

100

°C

REVERSE

FORWARD

IC = ICES

10M

Figure 13. Effects of Base−Emitter Resistance

TJ, JUNCTION TEMPERATURE (°C)

20

40

60

80

100

120

140

160

1.0M

100k

VCE = 30 V

IC = 10 x ICES

IC ≈ ICES

(TYPICAL ICES VALUES

OBTAINED FROM FIGURE 12)

IC = 2 x ICES

25

°C

+0.7

10k

1.0k

0.1k

ORDERING INFORMATION

Device

Package

Shipping†

BD243B

TO−220

50 Units / Rail

BD243BG

TO−220

(Pb−Free)

BD243C

TO−220

50 Units / Rail

BD243CG

TO−220

(Pb−Free)

BD244B

TO−220

50 Units / Rail

BD244BG

TO−220

(Pb−Free)

BD244C

TO−220

50 Units / Rail

BD244CG

TO−220

(Pb−Free)

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specifications Brochure, BRD8011/D.

Nº de peça semelhante - BD243BG

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ON Semiconductor	BD243BG	103Kb / 6P	Complementary Silicon Plastic Power Transistors November, 2014 ??Rev. 15

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Descrição semelhante - BD243BG

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BD243BG Folha de dados(PDF) 5 Page - ON Semiconductor

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