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STF11N52K3 Folha de dados(PDF) 5 Page - STMicroelectronics |
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STF11N52K3 Folha de dados(HTML) 5 Page - STMicroelectronics |
5 / 20 page STB11N52K3, STF11N52K3, STP11N52K3 Electrical characteristics Doc ID 018868 Rev 2 5/20 The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. Table 7. Source drain diode Symbol Parameter Test conditions Min. Typ. Max Unit ISD ISDM (1) 1. Pulse width limited by safe operating area Source-drain current Source-drain current (pulsed) - 10 40 A A VSD (2) 2. Pulsed: pulse duration = 300 µs, duty cycle 1.5% Forward on voltage ISD = 10 A, VGS = 0 - 1.5 V trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 10 A, di/dt = 100 A/µs VDD= 60 V (see Figure 19) - 270 2700 20 ns nC A trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 10 A, di/dt = 100 A/µs VDD= 60 V TJ = 150 °C (see Figure 19) - 320 3400 22 ns nC A Table 8. Gate-source Zener diode Symbol Parameter Test conditions Min. Typ. Max. Unit BVGSO Gate-source breakdown voltage Igs=± 1 mA (open drain) 30 - - V |
Nº de peça semelhante - STF11N52K3 |
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Descrição semelhante - STF11N52K3 |
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